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Key Components for Transmission
- 5G massive MIMO Radios
- DC/DC Bricks
- AC/DC PSU
- 5G Small Cells
- Active Antenna Systems
5G massive MIMO Radios
Magnetics
Common Mode Choke
- SMD Common mode filter up to 31A heat rating
- 1500VDC withstanding between the coils. Low Profile design
- SMD and Reflow able for easy production
MOSFETs
80 V Gen 5 N-Channel MOSFET
- Best switching performace with latest Silicon Technogloy
- Clip package for high SOA
- Industry standard PowerPAK® SO8
MOSFETs
Gen 5 Silicon Power MOSFET
- Optimized switching performance with lowest Qoss
- 150 VDS, 7.9 mΩ in PowerPAK® SO8
- Less than 8 mΩ in industry standard PowerPAK SO8
Inductors
Low Profile, High Current IHLP® Inductors
- Very large SMD, high current power inductor for DC/DC convertion and filtering
- Current up to >100 A
- Composite construction. Handles high transient current spikes without saturation
Inductors
High Current Through-Hole Inductors, Edge-Wound Series
- High-current inductor constructed with flat ribbon wire for minimal losses
- The powdered iron core material provides stable saturation to 180 °C
- High isolation voltage, customization possible
Inductors
Low Profile, High Current Through-Hole Inductors, Edge-Wound Series
- Low loss ferrite core for minimal AC power losses
- Low profile package that has better mechanical stability
Diodes and Rectifiers
Surface-Mount PAR® Transient Voltage Suppressors
- TJ = 185 °C capability suitable for high reliability
- 3000 W peak pulse power capability with 10/1000 µs waveform
Resistors
Power Metal Strip® Resistors, Low Value (Down to 0.0005 Ω), Surface-Mount
- Extremely low resistance values from 0.0005 Ω to 0.5 Ω and tolerance of 1 %
- Power Metal Strip all-welded construction offers high pulse capacity
Resistors
High Frequency, 50 GHz, Thin Film Chip Resistors
- Operating frequency 50 GHz
- Thin film microwave resistors
Ceramic Capacitors
Ultra Stable Dielectric Material for High Frequency, High Temperature (175 °C / 200 °C)
- Small sizes 0402, 0505, 0603, 0805, 1111 including sub-pico range
- Voltage range from 25 VDC up to 500 VDC
Power ICs
80 A VRPower®, Smart Power Stage With Current Sensing and Temperature Monitor
- 80 A with lossless current sensing- no shunt needed
- Temperature and current monitoring
- Integrated MOSFET driver
Diodes and Rectifiers
High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier
- Ultra Low VF = 0.53 V at IF = 5 A
- Compact, thermally efficient FlatPAK 5 x 6
Resistors
Metal Foil Current Sense Resistors, Very High Power (to 2 W)
- Ultra low sensing resistance minimizes power dissipation, improving efficiency
- Wide side terminal construction (0508 and 0612) for lower ESL
- High power to foot print size ratio (2 W in 0612 and 0.5 W in 0508
Inductors
Ultra Low DCR Inductors, High Temperature (155 °C) Series
- Lowest DCR/μH, in this package size. Inductance values up to 100nH
- Excellent DC/DC energy storage up to 10 MHz.
- Shielded construction. Handles high transient current spikes without saturation
Aluminum Capacitors
Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance
- Long useful life: up to 4000 h at 125 °C
- Very low ESR and high ripple current
- High voltages up to 80 V
DC/DC Bricks
MOSFETs
Gen 5 Silicon Power MOSFET
- Optimized switching performance with lowest Qoss
- 150 VDS, 7.9 mΩ in PowerPAK® SO8
- Less than 8 mΩ in industry standard PowerPAK SO8
MOSFETs
80 V Gen 5 N-Channel MOSFET
- Best switching performace with latest Silicon Technogloy
- Clip package for high SOA
- Industry standard PowerPAK® SO8
Diodes and Rectifiers
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
- Very low profile, typical height of 1.1 mm
- Trench MOS Schottky technology
Resistors
Power Metal Strip® Resistors, Low Value (Down to 0.0005 Ω), Surface-Mount
- Extremely low resistance values from 0.0005 Ω to 0.5 Ω and tolerance of 1 %
- Power Metal Strip all-welded construction offers high pulse capacity
Inductors
IHLP® Commercial Inductors, High Saturation Series
- Compact composite inductor for high efficiency DC/DC conversion
- High frequency operation out to 5 MHz, excellent saturation
- Reduced emission of EMI
Tantalum Capacitors
vPolyTan™ Polymer Tantalum Capacitors
- High-capacitance, low-ESR polymer tantalum capacitors
- Higher voltage handling capability < requires less voltage derating
- Stable electrical performance over temperature and voltage
- Small case size, low profile
Diodes and Rectifiers
High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier
- Ultra Low VF = 0.53 V at IF = 5 A
- Compact, thermally efficient FlatPAK 5 x 6
Resistors
Metal Foil Current Sense Resistors, Very High Power (to 2 W)
- Ultra low sensing resistance minimizes power dissipation, improving efficiency
- Wide side terminal construction (0508 and 0612) for lower ESL
- High power to foot print size ratio (2 W in 0612 and 0.5 W in 0508
Aluminum Capacitors
Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance
- Long useful life: up to 4000 h at 125 °C
- Very low ESR and high ripple current
- High voltages up to 80 V
Inductors
Ultra Low DCR Inductors, High Temperature (155 °C) Series
- Lowest DCR/μH, in this package size. Inductance values up to 100nH
- Excellent DC/DC energy storage up to 10 MHz.
- Shielded construction. Handles high transient current spikes without saturation
AC/DC PSU
Diodes and Rectifiers
Enhanced isoCink+™ Bridge Rectifier
- Thin single in-line package, Superior thermal conductivity
- Low forward voltage drop, low power losses
- 175 °C operating junction temperature
Resistors
Professional Thin Film MELF Resistors
- Excellent overall stability: excees class 0.25
- Best-in-class pulse load capability
Ceramic Capacitors
X1/Y1 safety rating (acc. to IEC 60384-14, 3rd edition)
- AC Line Rated Ceramic Disc Capacitors
- Highest reliability and lifetime, operating temperature - 40 °C to + 125 °C
Ceramic Capacitors
Safety certified capacitors, Class X1/Y2 and X2 for 250 VAC in C0G (NP0) and X7R
- Approved IEC 60384-14
- Surface-mount design for simpler assembly
- Available in NP0 (C0G) or X7R dielectrics with higher capacitance, smaller sizes
Film Capacitors
THB Grade IIB Class X2 Interference Suppression Film Capacitor
- RFI X2 capacitor for standard across-the-line applications
- THB grade IIB: 85 °C, 85 % RH, 500 h at URAC
Magnetics
Common Mode Choke
- SMD Common mode filter up to 31A heat rating
- 1500VDC withstanding between the coils. Low Profile design
- SMD and Reflow able for easy production
MOSFETs
E Series Power 600 V (D-S) MOSFET
- 4th generation E series technology. Low figure-of-merit (FOM) RON x Qg, Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Low profile, Thermally efficient PowerPAK® 10 x 12 package
Capacitors
High Ripple Current, Compact 105 °C Aluminum Capacitor
- High peak ripple current capability at 105 °C
- Useful life 3000 h at 105 °C translates to >15 years of 24/7 application life at 60 °C
MOSFETs
4th Gen Superjunction MOSFETs with 600 V and Fast Body Diode
- Fast body diodes for improved switching performance in resonant topologies
- Avalanche energy rated (UIS)
- Reduced FOM and low output capacitance for low switching losses
MOSFETs
E Series Power 600 V (D-S) MOSFET
- 4th generation E series technology. Low figure-of-merit (FOM) RON x Qg, Low effective capacitance (Co(er))
- EF Series With Fast Body Diode. Lowest switching and conduction losses
- Low profile, Thermally efficient PowerPAK® 10 x 12 package
MOSFETs
80 V Gen 5 N-Channel MOSFET
- Best switching performace with latest Silicon Technogloy
- Clip package for high SOA
- Industry standard PowerPAK® SO8
MOSFETs
Gen 5 Silicon Power MOSFET
- Optimized switching performance with lowest Qoss
- 150 VDS, 7.9 mΩ in PowerPAK® SO8
- Less than 8 mΩ in industry standard PowerPAK SO8
Resistors
Power Metal Strip® Resistors, Low Value (Down to 0.0001 Ω), Surface-Mount
- Extremely low resistance values down to 0.0001 Ω
- Power Metal Strip® resistors ideal for all types of current sensing, voltage division, and pulse applications
Optoelectronics
Optocoupler With Phototransistor Output and Low Forward Current of IF = 1 mA
- High current transfer ratio and high isolation voltage of 5300 VRMS
- Operating temperature from -55 °C to +110 °C in DIP-4 or SMD-4 package
5G Small Cells
Power ICs
4.5 V to 55 V Input, 3 A, 5 A, 8 A, 12 A, microBUCK® DC/DC Converters
- Wide input voltage, high efficiency synchronous buck regulators
- Versatile, highly efficient, highly configurable, and robust and reliable
- Scalable output power with versions in identical package
Tantalum Capacitors
vPolyTan™ Polymer Tantalum Capacitors
- High-capacitance, low-ESR polymer tantalum capacitors
- Higher voltage handling capability < requires less voltage derating
- Stable electrical performance over temperature and voltage
- Small case size, low profile
Resistors
Power Metal Strip® Resistors, Low Value (Down to 0.0005 Ω), Surface-Mount
- Extremely low resistance values from 0.0005 Ω to 0.5 Ω and tolerance of 1 %
- Power Metal Strip all-welded construction offers high pulse capacity
Aluminum Capacitors
Ruggedized Electrical Double Layer Energy Storage Capacitors, Up to 3 V
- Wide input voltage, high efficiency synchronous buck regulators
- Versatile, highly efficient, highly configurable, and robust and reliable
- Scalable output power with versions in identical package
Power ICs
28 V, 56 mΩ Load Switch with Programmable Current Limit and Slew Rate Control
- < 1 µs short circuit response time, and 20 % ILIM accuracy over temperature
- High-voltage synchronous Buck converters
Thermistors
SMD 0603, Glass Protected NTC Thermistors
- Standard series, AEC-Q200 qualified
- Glass protected with soft terminations
Ceramic Capacitors
Excellent Power Handling Capabilities
- Non-magnetic available with copper or epoxy bondable terminations
- Lead-bearing terminations available for high-reliability applications
- Case sizes: 0402 to 3838
Resistors
High Frequency, 50 GHz, Thin Film Chip Resistors
- Operating frequency 50 GHz
- Thin film microwave resistors
Optoelectronics
Low power, low voltage proximity sensor, with 0.35mm height in two I
- Supply voltage range VDD: 1.65 V to 1.95 V
- I2C bus H-level range: 1.65 V to 3.6 V
- Down to 5uA in periodic sampling mode
Diodes and Rectifiers
High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier
- Ultra Low VF = 0.53 V at IF = 5 A
- Compact, thermally efficient FlatPAK 5 x 6
Active Antenna Systems
Resistors
High Frequency, 50 GHz, Thin Film Chip Resistors
- Operating frequency 50 GHz
- Thin film microwave resistors
Resistors
High Frequency (Up to 40 GHz) Resistor, Thin Film Surface Mount Chip
- Small standard size 0402 case size, Edge trimmed block resistors
- Small internal reactance (< 10 mΩ), Low TCR (down to ± 25 ppm/°C)
- High purity alumina substrate
Ceramic Capacitors
Excellent Power Handling Capabilities
- Non-magnetic available with copper or epoxy bondable terminations
- Lead-bearing terminations available for high-reliability applications
- Case sizes: 0402 to 3838
Thermistors
SMD 0603, Glass Protected NTC Thermistors
- Standard series, AEC-Q200 qualified
- Glass protected with soft terminations
MOSFETs
N-Channel 100 V (D-S) MOSFET
- TrenchFET® Gen IV power MOSFET
- Very low RDS - Qg figure-of-merit (FOM). Tuned for the lowest RDS - Qoss FOM
- Compact thermally efficient PowerPAK® 1212-8S package
MOSFETs
Gen 5 Silicon Power MOSFET
- Optimized switching performance with lowest Qoss
- 150 VDS, 7.9 mΩ in PowerPAK® SO8
- Less than 8 mΩ in industry standard PowerPAK SO8
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