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Designs (29)

29 Results - Page 1/3 |< < 1 2 3
Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EVALMASTERGAN1: Half-Bridge Driver with 650V GaN HEMT Transistors Manufacturer: STMicroelectronics

The EVALMASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) LMG1210EVM-012: 10A, 0 ~ 100V Half Bridge Driver Manufacturer: Texas Instruments

The LMG1210EVM-012 is a small, easy-to-use power stage with an external PWM signal (or HI and LI). The board can be configured as a buck converter, boost converter or other converter topology using a half bridge.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) TIDA-01634: 5A, 0 ~ 60V, Parallel Half H-Bridge Driver Manufacturer: Texas Instruments

The TIDA-01634 reference design implements a multi-MHz power stage design based on the LMG1210 half-bridge GaN driver and GaN power HEMTs. With highly efficient switches and flexible dead-time adjustment, this design can significantly improve power density while achieving good efficiency as well as wide control bandwidth.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9048C: 15A, 0 ~ 160V, Half H-Bridge Manufacturer: EPC

The EPC9048C is a half bridge development board with onboard gate driver, featuring the 200V, 15A rated EPC2034C GaN field effect transistor (FET).

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) TDHBG1200DC100-KIT: 1.2 kW Half-Bridge Buck 2:1 or Boost 1:2 Manufacturer: Renesas Electronics Corporation

The TDHBG1200DC100 1.2 kW half-bridge evaluation board provides the elements of a simple buck or boost converter for basic study of switching characteristics and efficiency achievable with GaN FETs.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9049: 4A, 0 ~ 60V, Half Bridge Manufacturer: EPC

This development board is in a half bridge topology with onboard gate drives, featuring theEPC2035/36 eGaN® field effect transistors

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9051: 1A, 0 ~ 40V, 15MHz, Class E Amplifier Manufacturer: EPC

The EPC9051 is a high efficiency, differential mode class-E amplifier demonstration board that can operate up to 15 MHz. This board may also be used for applications where a low side switch is utilized. Examples include, and are not limited to, push-pull converters, current-mode Class D amplifiers, common source bi-directional switch, and generic high voltage narrow pulse width applications such as LiDAR.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9050 : 2.5A, 0 ~ 80V, Half Bridge Manufacturer: EPC

This development board is in a half bridge topology with onboard gate drives, featuring the EPC2035/36 eGaN® field effect transistors

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9057: 6A, 0 ~ 80V, Half-bridge Manufacturer: EPC

The EPC9057 development board is a 80 V maximum device voltage, 6 A maximum output current, half bridge with onboard gate drives, featuring the EPC2039 (EPC2214 is the recommended replacement, 10A) enhancement mode (eGaN®) FET.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9091: 5A, 0 ~ 100V Half H-Bridge, eGaN Manufacturer: EPC

The EPC9091 development board is a 100 V maximum device voltage, 5 A output current, half bridge with onboard gate drives, featuring the EPC2051 enhancement mode (eGaN) field effect transistor (FET).

29 Results - Page 1/3 |< < 1 2 3