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image of Maximum efficiency and power: GaN Maximum efficiency and power: GaN

Advanced GaN reference designs for you!

EPC EPC2152 Integrated ePower Stage Single-Chip Driver PIO | DigiKey

This video discusses the EPC2152 Integrated ePower Stage by EPC, a single-chip driver and half-bridge power stage. It offers fast switching, robust transient handling, and a compact design for high-frequency power applications.

image of Unlocking the power of GaN webinar Unlocking the power of GaN

Our experts from Microchip and EPC will provide valuable insights into the technical advantages and practical applications of GaN-based high power density solutions.

eGaN-based Eighth Brick Converter eGaN-based Eighth Brick Converter Fecha de publicación: 2015-08-24

Review of the design specifications of a 500 W 1/8th brick converter

Duration: 5 minutes
917-EPC2100ENG-ND eGaN Integrated GaN Power Fecha de publicación: 2015-06-19

eGaN technology offers higher power density through size reduction and speed reduction, and parasitic reduction.

Duration: 5 minutes
eGaN FETS Driving eGaN FETs with the LM5113 Fecha de publicación: 2012-10-16

The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.

Duration: 15 minutes
Paralleling eGaN FETs Paralleling eGaN® FETs Fecha de publicación: 2012-04-26

Detailing the work done to make it as easy as possible to use eGaN FETs in power conversion applications.

Duration: 10 minutes
2nd Gen eGaN FETs Second Gen Lead Free eGaN® FETs Overview Fecha de publicación: 2011-10-28

The new-generation is lead free and halogen free and has improved electrical performance.

Duration: 5 minutes
917-1027-2-ND eGaN® FET Reliability Actualizado: 2016-03-30

Significant performance and size advantages over silicon power MOSFETs allow for improved system efficiency, reduced system costs, and reduced design size.

Duration: 5 minutes
eGan Power Transistors Driving eGaN® Power Transistors Fecha de publicación: 2010-10-11

EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.

Duration: 5 minutes
eGaN FET's Characteristics eGan® FET's Characteristics Fecha de publicación: 2010-10-06

The operation of EPC’s enhancement mode gallium nitride transistors.

Duration: 5 minutes
eGaN Basics eGaN® Basics Fecha de publicación: 2010-09-27

The basics of EPC’s enhancement mode gallium nitride (eGaN) transistors.

Duration: 10 minutes
eGaN FETs for DC-DC Conversion eGan® FETs for DC-DC Conversion Fecha de publicación: 2010-01-22

eGan® power FETs offer performance enhancements well beyond the realm of silicon-based MOSFETs.

Duration: 5 minutes