eGaN FET's Characteristics

eGan® FET's Characteristics

EPC

This tutorial covers the operation of EPC’s enhancement mode gallium nitride transistors.  To explain the eGaN devices’ ease-of-use, it is necessary to first understand how the device operates and highlight both the similarities and differences versus current power MOSFETs.

Related Parts

ImagenNúmero de pieza del fabricanteDescripciónFunciónIntegradasPieza/CI utilizadoCantidad disponiblePrecioVer detalles
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015Unidad de medio puente H (FET externa)NoEPC20150 - Inmediata$90.00Ver detalles
EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001Unidad de medio puente H (FET externa)NoEPC20010 - Inmediata$118.75Ver detalles
EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007Unidad de medio puente H (FET externa)NoEPC80070 - Inmediata$143.75Ver detalles
EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001Unidad de medio puente H (FET externa)NoEPC20010 - Inmediata$90.00Ver detalles
PTM Published on: 2010-10-06

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Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Driving eGaN® Power Transistors EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
eGaN® Basics The basics of EPC’s enhancement mode gallium nitride (eGaN) transistors.