EPC9002C: 10A @ 0 ~ 100V, Half H-Bridge

Summary

The EPC9002 development board is a 100 V maximum device voltage, 10 A maximum output current, half bridge with onboard gate drives, featuring the EPC2001 enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2001 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9002 development board is 2” x 1.5” and contains two EPC2001 eGaN FET in a half bridge configuration using Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

Specifications

Manufacturer EPC
Category Power Management
Sub-Category Power Output Stages (H-Bridge, Half Bridge)
Eval Board Part Number 917-1127-ND
Eval Board Supplier EPC
Eval Board Normally In Stock
Configuration 1 Half H-Bridge
Voltage Out Range 0 ~ 100 V
Current Out 10 A
Interface PWM, Dual
Features Internal Bootstrap Circuit
Shoot Through Protection
Under Voltage Protection (UVP)
Switching Frequency (Max) Not given
Component Count + Extras 27 + 10
Design Author EPC
Main I.C. Base Part EPC2001C
Date Created By Author 2014-01
Date Added To Library 2025-11

Eval Board

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Support Documents & Media

EPC9002C - User Guide EPC2001C - Datasheet EPC9002C - Gerber Files (Zip File)

Media

EPC9002C - Schematic EPC9002C - Board EPC9001C - Block Diagram EPC9001C - Board Connections EPC9001C - Chart 1