Qorvo

Power efficiency and performance levels have become even more critical to the success of fast growing application areas such as electric vehicles, battery charging, renewables, and datacenters. It's this design trend that is driving the growth of SiC-based wide bandgap devices, legitimate options to replacing silicon. In this 6 part series titled "Are you SiC of silicon?", Qorvo VP of Engineering, Dr. Anup Bhalla, outlines why SiC FETs are the right choice in a wide number of fast-growing applications, and how they fit into a landscape that still includes MOSFETs, Superjunction, IGBTs and GaN HEMT. Engineers will read about the most important Figures of Merit as they relate to power transistors and diodes, and what they should consider when making a power circuit design change that includes SiC devices.

Technical Information

• Article 1: Application Trends in SiC
• Article 2: State of SiC Device and Package Technology
• Article 3: SiC Applications in Electric Vehicle (EV) Power Conversion
• Article 4: How to Build Better EV Traction Inverters with SiC
• Article 5: Ultra-High Voltage SiC and Supercascodes
• Article 6: Using Silicon Carbide (SiC) FETs in Data Center Power Supplies and Telecom Rectifiers