Power Semiconductor - Silicon Carbide (SiC)
Fecha de publicación: 2019-06-10
Silicon Carbide (SiC) devices have the potential to revolutionize today’s power electronics; featuring fast switching times, high blocking voltage capabilities & the ability to operate at high temperatures.
GeneSiC is offering and continuously improving innovative Silicon Carbide power rectifiers for high voltage rating applications, with significant advantages.
Optimize energy efficiency in HVAC systems with onsemi’s advanced intelligent power modules and power factor correction modules. Designed for high reliability and performance, they achieve high power density with minimum power dissipation.
ROHM offers many solutions in a variety of industries for all of your power needs; ranging from current detection resistors, 1200V IGBTs, gate drivers and more.
ROHM Semiconductor’s high-performance ICs and power devices are essential in the automotive industry's move towards electronification.
Diodo discreto de carburo de silicio de SemiQ
SemiQ presenta sus diodos del módulo Schottky de carburo de silicio.
Ofrece capacidad superior de soportar picos de corriente, coeficiente de temperatura positiva de Vf, figura de calidad superior Qc/lf y mucho más.
Entre las ventajas de los transistores de carburo de silicio se incluyen pérdidas de conmutación baja, mayor eficiencia, operación de alta temperatura y capacidad alta para soportar cortocircuito.
El diodo de carburo de silicio incluye capacidad superior de sobrecorriente y coeficiente de temperatura positivo de Vf.
Los módulos de potencia de SiC de alto rendimiento de la serie TRCDrive Pack™ en encapsulados HSDIP20 y DOT-247 de ROHM están diseñados para aplicaciones industriales y automotrices.
Explore Vishay alternative energy and power transmission solutions at DigiKey, including high-performance capacitors, resistors, diodes, MOSFETs, and power management components designed for solar, wind, EV, and industrial applications.

