MOSFETs Designed for On-Resistance Ratings at 1.2 V

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            MOSFETs Designed for On-Resistance Ratings at 1.2 V
                    Vishay helps designers simplify power management circuitry while extending battery run times in portable electronics
    

Siliconix's MOSFETs Designed for On-Resistance Ratings at 1.2 V The 1.2 V-rated Vishay Siliconix's TrenchFET® devices bring the MOSFET turn-on voltage into alignment with the 1.2 V to 1.3 V operating voltages of digital ICs used in mobile electronics, enabling safer and more reliable designs. As the first power MOSFETs that can be driven directly from 1.2 V buses, the new TrenchFETs provide the additional potential benefit of eliminating the need for an extra conversion stage in battery-operated systems with a core voltage lower than 1.8 V.

In MOSFETs where 1.5 V is the lowest rating, on-resistance tends to increase exponentially at lower, unspecified gate-to-source voltages such as 1.2 V. By contrast, these new 1.2 V TrenchFETs offer guaranteed low n-channel on-resistance as low as 0.041 Ω and p-channel on-resistance as low as 0.095 Ω at a 1.2 V gate drive. On-resistance performance at a 1.5 V gate drive is better than in devices for which 1.5 V is the lowest gate-to-source specification: as low as 0.022 (n-channel) and 0.058 (p-channel).

SiA414DJ – N-Channel 8-V (D-S) MOSFET
		Features Halogen-free Thermally Enhanced PowerPAK® SC-70 Package Small Footprint Area Applications Load Switch for Portable Applications
Si8429DB – P-Channel 1.2-V (G-S) MOSFET
		Features Industry First 1.2 V Rated MOSFET Ultra Small MICRO FOOT® Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area Applications Low Threshold Load Switch for Portable Devices Low Power Consumption Increased Battery Life Ultra Low Voltage Load Switch

Si1499DH – P-Channel 1.2 V (G-S) MOSFET

Siliconix's MOSFETs Designed for On-Resistance Ratings at 1.2 V

Features

Ultra-Low On-Resistance

Applications

Load Switch for Portable Devices
Guaranteed Operation at V_GS = 1.2 V Critical for Optimized Design and Longer Battery Life

Publicado: 2009-04-09

MOSFETs Designed for On-Resistance Ratings at 1.2 V

Número de pieza del fabricante	Descripción	Corriente - consumo continuo (Id) a 25ºC	Rds On (máx) @ Id, Vgs	Cantidad disponible	Precio	Ver detalles
SIA414DJ-T1-GE3	MOSFET N-CH 8V 12A PPAK SC70-6	12A (Tc)	11mOhm a 9.7A, 4.5V	1484 - Inmediata	$1.55	Ver detalles
SI8429DB-T1-E1	MOSFET P-CH 8V 11.7A 4MICROFOOT	11.7A (Tc)	35mOhm a 1A, 4.5V	0 - Inmediata	$1.57	Ver detalles
SI1499DH-T1-E3	MOSFET P-CH 8V 1.6A SC70-6	1.6A (Tc)	78mOhm a 2A, 4.5V	0 - Inmediata	$1.04	Ver detalles