LFPAK Trench 6 MOSFETs

Nexperia offers Trench 6 MOSFETs in loss free packaging (LFPAK). By combining Trench 6 silicon with the high performance LFPAK package, these new devices provide customers with numerous performance and reliability advantages.

Trench 6 silicon technology provides Nexperia’s lowest R_DS(ON) performance with 0.9 mΩ typical at V_GS = 10 V (PSMN1R2-25YL). These latest devices are ideal for a wide range of demanding applications including power ORing, motor control and high-efficiency synchronous buck-regulators.

The Trench 6 also offers lower gate-charge (Q_G) and low gate resistance (R_G). This makes the devices suitable for high-efficiency power management applications with switching frequencies up to 1 MHz.

Nexperia’s LFPAK delivers compact power in a surface mount package. It provides superior electrical and thermal resistance as well as low package inductance, while maintaining the widely accepted SO8 PCB footprint.

Features

• 25 V MOSFET in a Power-SO8 footprint with less than 1 mΩ R_DS(ON)
• R_DS(ON) MOSFET at 30 V
• One of the only Power-SO8 devices rated to 175°C
• One of the only Power-SO8 package automotive rated to AEC - Q101
• The LFPAK is rated for I_D(MAX) up to 100 A
• Avalanche rated
• RoHS-compliant and halogen-free
• Fully compatible with visual inspection machines (unlike many Power-SO8 alternatives that require X-ray inspection)