EPC9091: 5A, 0 ~ 100V Half H-Bridge, eGaN

The EPC9091 development board is a 100 V maximum device voltage, 5 A output current, half bridge with onboard gate drives, featuring the EPC2051 enhancement mode (eGaN) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2051 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9091 development board is 2" x 2" and contains two EPC2051 eGaN FETs in a half bridge configuration using the uP1966A gate driver from uPI Semiconductor Corp. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A block diagram of the circuit is given below.

For more information on the EPC2051 please refer to the datasheet available which should be read in conjunction with this quick start guide. GaN