Name: SISA18BDN-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SISA18BDN-T1-GE3TR-ND
Price: 1.23 USD
Availability: InStock

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SISA18BDN-T1-GE3
DigiKey Part Number	742-SISA18BDN-T1-GE3TR-ND - Tape & Reel (TR) 742-SISA18BDN-T1-GE3CT-ND - Cut Tape (CT) 742-SISA18BDN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISA18BDN-T1-GE3
Description	N-CHANNEL 30 V (D-S) MOSFET POWE
Manufacturer Standard Lead Time	19 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 18A (Ta), 60A (Tc) 3.2W (Ta), 36.8W (Tc) Surface Mount PowerPAK® 1212-8PT
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Series TrenchFET® Gen IV	Vgs (Max) +20V, -16V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 15 V
Part Status Active	Power Dissipation (Max) 3.2W (Ta), 36.8W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 30 V	Supplier Device Package PowerPAK® 1212-8PT
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 60A (Tc)	Package / Case 8-PowerWDFN
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SISA18
Rds On (Max) @ Id, Vgs 6.83mOhm @ 10A, 10V

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SISA18BDN-T1-GE3