Name: SI8812DB-T2-E1
Brand: Vishay Siliconix
SKU: SI8812DB-T2-E1TR-ND
Price: 0.8 USD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI8812DB-T2-E1
DigiKey Part Number	SI8812DB-T2-E1TR-ND - Tape & Reel (TR) SI8812DB-T2-E1CT-ND - Cut Tape (CT) SI8812DB-T2-E1DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI8812DB-T2-E1
Description	MOSFET N-CH 20V 4MICROFOOT
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 20 V 2.3A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
Datasheet	Datasheet
EDA/CAD Models	SI8812DB-T2-E1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 8 V
Vgs (Max)	±5V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-UFBGA
Base Product Number	SI8812