Name: TPN22006NH,LQ
Brand: Toshiba Semiconductor and Storage
SKU: TPN22006NHLQTR-ND
Price: 1.68 USD
Availability: InStock

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TPN22006NH,LQ
DigiKey Part Number	TPN22006NHLQTR-ND - Tape & Reel (TR) TPN22006NHLQCT-ND - Cut Tape (CT) TPN22006NHLQDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPN22006NH,LQ
Description	MOSFET N-CH 60V 9A 8TSON
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 9A (Ta) 700mW (Ta), 18W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Datasheet	Datasheet
EDA/CAD Models	TPN22006NH,LQ Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 100µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Series U-MOSVIII-H	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 30 V
Part Status Active	Power Dissipation (Max) 700mW (Ta), 18W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 60 V	Supplier Device Package 8-TSON Advance (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C 9A (Ta)	Package / Case 8-PowerVDFN
Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V	Base Product Number TPN22006
Rds On (Max) @ Id, Vgs 22mOhm @ 4.5A, 10V

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Tape & Reel (TR)

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TPN22006NH,LQ