Name: RN1131MFV(TL3,T)
Brand: Toshiba Semiconductor and Storage
SKU: RN1131MFV(TL3T)CT-ND
Price: 0.19 USD
Availability: InStock

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RN1131MFV(TL3,T)
DigiKey Part Number	RN1131MFV(TL3T)CT-ND - Cut Tape (CT)
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	RN1131MFV(TL3,T)
Description	TRANS PREBIAS NPN 50V 0.1A VESM
Customer Reference
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
EDA/CAD Models	RN1131MFV(TL3,T) Models

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Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors	DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Manufacturer Toshiba Semiconductor and Storage	Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Packaging Cut Tape (CT)	Current - Collector Cutoff (Max) 100nA (ICBO)
Part Status Active	Power - Max 150 mW
Transistor Type NPN - Pre-Biased	Mounting Type Surface Mount
Current - Collector (Ic) (Max) 100 mA	Package / Case SOT-723
Voltage - Collector Emitter Breakdown (Max) 50 V	Supplier Device Package VESM
Resistors Included R1 Only	Base Product Number RN1131
Resistor - Base (R1) 100 kOhms

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Substitutes (1)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
DTC115TM3T5G	onsemi	535,500	488-DTC115TM3T5GCT-ND	$0.26000	Similar

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RN1131MFV(TL3,T)