MJE800G is Obsolete and no longer manufactured.
Available Substitutes:

Direct


onsemi
In Stock: 5,862
Unit Price: $1.66000
Datasheet

Direct


onsemi
In Stock: 308
Unit Price: $1.58000
Datasheet

Direct


STMicroelectronics
In Stock: 3,836
Unit Price: $0.79000
Datasheet

Similar


STMicroelectronics
In Stock: 4,271
Unit Price: $0.90000
Datasheet
Bipolar (BJT) Transistor NPN - Darlington 60 V 4 A 40 W Through Hole TO-126
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJE800G

DigiKey Part Number
MJE800GOS-ND
Manufacturer
Manufacturer Product Number
MJE800G
Description
TRANS NPN DARL 60V 4A TO-126
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 60 V 4 A 40 W Through Hole TO-126
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Bulk
Part Status
Obsolete
Transistor Type
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A, 3V
Power - Max
40 W
Frequency - Transition
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Base Product Number
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

Obsolete
This product is no longer manufactured. View Substitutes