Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole IPAK
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MJD112-1G

DigiKey Part Number
MJD112-1GOS-ND
Manufacturer
onsemi
Manufacturer Product Number
MJD112-1G
Description
TRANS NPN DARL 100V 2A IPAK
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole IPAK
Datasheet
 Datasheet
EDA/CAD Models
MJD112-1G Models
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Tube
Part Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (Max)
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
1.75 W
Frequency - Transition
25MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package
IPAK
Base Product Number
MJD112
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In-Stock: 5,845
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MAXIMUM PURCHASE LIMIT
Tube:2850
Quantity
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Tube
QuantityUnit PriceExt Price
1$1.60000$1.60
75$0.70960$53.22
150$0.63507$95.26
525$0.52890$277.67
1,050$0.48291$507.06
2,025$0.44610$903.35
5,025$0.40418$2,031.00
10,050$0.38638$3,883.12
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.