N-Channel 1200 V 41A (Tc) 250W (Tc) Through Hole TO-247-4
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IV2Q12080T4Z

DigiKey Part Number
4084-IV2Q12080T4Z-ND
Manufacturer
Inventchip
Manufacturer Product Number
IV2Q12080T4Z
Description
GEN2, SIC MOSFET, 1200V 80MOHM,
Customer Reference
Detailed Description
N-Channel 1200 V 41A (Tc) 250W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Inventchip
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
104mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
4.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 18 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1214 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 10
Due to temporary constrained supply, DigiKey is unable to accept backorders at this time.
Quantity
All prices are in USD
Tube
QuantityUnit PriceExt Price
1$8.19000$8.19
10$5.57700$55.77
100$4.09780$409.78
500$3.53750$1,768.75
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.