N-Channel 650 V 60A (Tc) 249W (Tc) Through Hole TO-263-7
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IV2Q06040D7Z

DigiKey Part Number
4084-IV2Q06040D7Z-ND
Manufacturer
Inventchip
Manufacturer Product Number
IV2Q06040D7Z
Description
GEN 2, SIC MOSFET, 650V 40MOHM,
Manufacturer Standard Lead Time
15 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 60A (Tc) 249W (Tc) Through Hole TO-263-7
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Inventchip
Series
-
Packaging
Strip
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
53mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4.5V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs
94.7 nC @ 18 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 600 V
FET Feature
-
Power Dissipation (Max)
249W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab)
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In-Stock: 60
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Quantity
All prices are in USD
Strip
QuantityUnit PriceExt Price
1$10.27000$10.27
10$7.07600$70.76
100$5.27300$527.30
500$4.76250$2,381.25