N-Channel 1200 V 6.4A (Tc) 66.9W (Tc) Through Hole TO-220-3
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IV1Q12750O3

DigiKey Part Number
4084-IV1Q12750O3-ND
Manufacturer
Inventchip
Manufacturer Product Number
IV1Q12750O3
Description
SIC MOSFET, 1200V 750MOHM, TO220
Manufacturer Standard Lead Time
15 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 6.4A (Tc) 66.9W (Tc) Through Hole TO-220-3
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Inventchip
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
6.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
900mOhm @ 1.5A, 20V
Gate Charge (Qg) (Max) @ Vgs
15.8 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
260 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
66.9W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
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Available To Order
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This product is not kept in stock at DigiKey. The lead time shown will apply to the manufacturer’s shipment to DigiKey. Upon receiving the product, DigiKey will ship to fill open orders.
Quantity
All prices are in USD
Tube
QuantityUnit PriceExt Price
100$2.37210$237.21
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.