N-Channel 1200 V 33A (Tc) 224W (Tc) Through Hole TO-247AB
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SICW080N120H-BP

DigiKey Part Number
353-SICW080N120H-BP-ND
Manufacturer
Manufacturer Product Number
SICW080N120H-BP
Description
SIC MOSFET,TO-247AB
Manufacturer Standard Lead Time
52 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 33A (Tc) 224W (Tc) Through Hole TO-247AB
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
110mOhm @ 15A, 20V
Vgs(th) (Max) @ Id
4.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
131 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
2644 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
224W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247AB
Package / Case
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Available To Order
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This product is not kept in stock at DigiKey. The lead time shown will apply to the manufacturer’s shipment to DigiKey. Upon receiving the product, DigiKey will ship to fill open orders.
All prices are in USD
Tube
QuantityUnit PriceExt Price
1,800$3.88750$6,997.50
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.