SiC Schottky Barrier Diode

PANJIT’s first-generation silicon carbide (SiC) Schottky barrier diode (SBD) was developed for electrical engineers to design higher performance systems with lower heat dissipation. A fast recovery diode (FRD) has some reverse recovery current at turn-off operation that generates additional switching losses when the main switch is turned on. In contrast, the Schottky barrier diode has no reverse recovery current so it can be used at a higher switching frequency, but it has a drawback of lower breakdown voltage due to higher leakage

SiC devices have higher bandgap energy than silicon devices, meaning very low leakage current. SiC devices also have higher electron velocity which brings up superior switching performance over silicon device.

PANJIT's SiC SBD Gen.1 is optimized to have low temperature dependency for forward voltage (V_F) so that conduction losses can be suppressed in higher temperature operation.

PANJIT's SiC SBD Gen.1 has a junction barrier Schottky (JBS) structure by adding a P+ layer on the metal contact area. As a result, surge current capacity can be dramatically improved, which is helpful to ensure system-level reliability for cold-start system operation.

PANJIT's SiC SBD Gen.1 lineup comes with breakdown voltages of 650 V and 1,200 V, current ratings of 4 A to 20 A, and various discrete packages such as TO-220AC, TO-263, and TO-252AA.