LT5558 Datasheet by Analog Devices Inc.

View All Related Products | Download PDF Datasheet
LTLII‘IEAQ LT5558 TECHNOLOGY L7 I D> as ) t AC « if»? , \.__-‘/ D) % >®ZZ T 7 “Wm“ \j i L7 LJUW
LT5558
1
5558fa
TYPICAL APPLICATION
FEATURES
APPLICATIONS
DESCRIPTION
600MHz to 1100MHz
High Linearity Direct
Quadrature Modulator
The LT
®
5558 is a direct I/Q modulator designed for high
performance wireless applications, including wireless
infrastructure. It allows direct modulation of an RF signal
using differential baseband I and Q signals. It supports
GSM, EDGE, CDMA, CDMA2000, and other systems. It
may also be confi gured as an image reject upconverting
mixer, by applying 90° phase-shifted signals to the I and
Q inputs. The high impedance I/Q baseband inputs consist
of voltage-to-current converters that in turn drive double-
balanced mixers. The outputs of these mixers are summed
and applied to an on-chip RF transformer, which converts
the differential mixer signals to a 50Ω single-ended output.
The balanced I and Q baseband input ports are intended
for DC coupling from a source with a common-mode
voltage level of about 2.1V. The LO path consists of an LO
buffer with single-ended input, and precision quadrature
generators which produce the LO drive for the mixers.
The supply voltage range is 4.5V to 5.25V.
600MHz to 1100MHz Direct Conversion Transmitter Application
Direct Conversion from Baseband to RF
High OIP3: + 22.4dBm at 900MHz
Low Output Noise Floor at 20MHz Offset:
No RF: –158dBm/Hz
P
OUT = 4dBm: –152.7dBm/Hz
Low Carrier Leakage: –43.7dBm at 900MHz
High Image Rejection: –49dBc at 900MHz
3 Channel CDMA2000 ACPR: –70.4dBc at 900MHz
Integrated LO Buffer and LO Quadrature Phase
Generator
50Ω AC-Coupled Single-ended LO and RF Ports
High Impedance Interface to Baseband Inputs
with 2.1V Common Mode Voltage
16-Lead QFN 4mm × 4mm Package
RFID Single-Sideband Transmitters
Infrastructure TX for Cellular and ISM Bands
Image Reject Up-Converters for Cellular Bands
Low-Noise Variable Phase-Shifter for 600MHz to
1100MHz Local Oscillator Signals
Microwave Links
BASEBAND
GENERATOR
RF = 600MHz TO
1100MHz
QDAC
IDAC
I-CH
Q-CH
O°
90°
V-1
VCO/SYNTHESIZER
2, 4, 6, 9, 10,
12, 15, 17
BALUN
LT5558
VCC
8, 13
5V
2 x 100nF
11
3
14
16
1
EN
7
5
PA
V-1
5558 TA01
CDMA2000 ACPR, AltCPR and Noise vs
RF Output Power at 900MHz for 1 and 3 Carriers
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
RF OUTPUT POWER PER CARRIER (dBm)
–30
–90
ACPR, ALTCPR (dBc)
NOISE FLOOR AT 30MHz OFFSET (dBm/Hz)
–80
–70
–60
–50
–40
–160
–150
–140
–130
–120
–110
–25 –20 –15 –10
5558 TA01b
–5 0
3-CH ACPR
1-CH ACPR
3-CH NOISE
3-CH ALTCPR
1-CH ALTCPR
1-CH NOISE
DOWNLINK TEST
MODEL 64 DPCH
LT5558 L7LJLJEQB
LT5558
2
5558fa
PACKAGE/ORDER INFORMATION
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ........................................................5.5V
Common-Mode Level of BBPI, BBMI and
BBPQ, BBMQ .......................................................2.5V
Voltage on any Pin
Not to Exceed ....................–500mV to (VCC + 500mV)
Operating Ambient Temperature
(Note 2) ............................................... –40°C to 85°C
Storage Temperature Range ................... –65°C to 125°C
(Note 1)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
RF Output (RF)
fRF RF Frequency Range –3 dB Bandwidth
–1 dB Bandwidth
600 to 1100
680 to 960
MHz
MHz
S22, ON RF Output Return Loss EN = High (Note 6) –15.8 dB
S22, OFF RF Output Return Loss EN = Low (Note 6) –13.3 dB
NFloor RF Output Noise Floor No Input Signal (Note 8)
PRF = 4dBm (Note 9)
PRF = 4dBm (Note 10)
–158
–152.7
–152.3
dBm/Hz
dBm/Hz
dBm/Hz
GPConversion Power Gain POUT/PIN,I&Q 9.7 dB
GVConversion Voltage Gain 20 • Log (VOUT, 50Ω/VIN, DIFF, I or Q) –5.1 dB
POUT Absolute Output Power 1VP-P DIFF CW Signal, I and Q –1.1 dBm
G3LO vs LO 3 • LO Conversion Gain Difference (Note 17) –26.5 dB
OP1dB Output 1dB Compression (Note 7) 7.8 dBm
OIP2 Output 2nd Order Intercept (Notes 13, 14) 65 dBm
OIP3 Output 3rd Order Intercept (Notes 13, 15) 22.4 dBm
IR Image Rejection (Note 16) –49 dBc
LOFT Carrier Leakage
(LO Feedthrough)
EN = High, PLO = 0dBm (Note 16)
EN = Low, PLO = 0dBm (Note 16)
–43.7 dBm
–60 dBm
EVM GSM Error Vector Magnitude PRF = 2dBm 0.6 %
LO Input (LO)
fLO LO Frequency Range 600 to 1100 MHz
PLO LO Input Power –10 0 5 dBm
V
CC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz,
PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90° shifted
(upper sideband selection). PRF(OUT) = –10dBm, unless otherwise noted. (Note 3)
Consult LTC Marketing for parts specifi ed with wider operating temperature ranges.
16 15 14 13
5 6 7 8
TOP VIEW
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
9
10
11
12
4
3
2
1EN
GND
LO
GND
GND
RF
GND
GND
BBMI
GND
BBPI
VCC
BBMQ
GND
BBPQ
VCC
TJMAX = 125°C, θJA = 37°C/W
EXPOSED PAD (PIN 17) IS GND, MUST BE
SOLDERED TO PCB
ORDER PART NUMBER
LT5558EUF
UF PART MARKING
5558
Order Options Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF
Lead Free Part Marking: http://www.linear.com/leadfree/
LT5558 L7 LJUW
LT5558
3
5558fa
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
S11, ON LO Input Return Loss EN = High (Note 6) –10.6 dB
S11, OFF LO Input Return Loss EN = Low (Note 6) –2.5 dB
NFLO LO Input Referred Noise Figure (Note 5) at 900MHz 14.6 dB
GLO LO to RF Small-Signal Gain (Note 5) at 900MHz 16.4 dB
IIP3LO LO Input 3rd Order Intercept (Note 5) at 900MHz –3.3 dBm
Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)
BWBB Baseband Bandwidth –3dB Bandwidth 400 MHz
VCMBB DC Common-mode Voltage (Note 4) 2.1 V
RIN, DIFF Differential Input Resistance Between BBPI and BBMI (or BBPQ and BBMQ) 3 kΩ
RIN, CM Common Mode Input Resistance (Note 20) 100 Ω
ICM, COMP Common Mode Compliance Current range (Notes 18, 20) –820 to 440 μA
PLO-BB Carrier Feedthrough on BB POUT = 0 (Note 4) –46 dBm
IP1dB Input 1dB compression point Differential Peak-to-Peak (Notes 7, 19) 3.4 VP-P,DIFF
ΔGI/Q I/Q Absolute Gain Imbalance 0.05 dB
ΔϕI/Q I/Q Absolute Phase Imbalance 0.2 Deg
Power Supply (VCC)
VCC Supply Voltage 4.5 5 5.25 V
ICC(ON) Supply Current EN = High 108 135 mA
ICC(OFF) Supply Current, Sleep mode EN = 0V 0.1 50 μA
tON Turn-On Time EN = Low to High (Note 11) 0.3 μs
tOFF Turn-Off Time EN = High to Low (Note 12) 1.1 μs
Enable (EN), Low = Off, High = On
Enable Input High Voltage
Input High Current
EN = High
EN = 5V
1
230
V
μA
Shutdown Input Low Voltage EN = Low 0.5 V
ELECTRICAL CHARACTERISTICS
V
CC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz,
PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90° shifted
(upper sideband selection). PRF(OUT) = –10dBm, unless otherwise noted. (Note 3)
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Specifi cations over the –40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
Note 3: Tests are performed as shown in the confi guration of Figure 7.
Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ.
Note 5: VBBPI - VBBMI = 1VDC, VBBPQ - VBBMQ = 1VDC.
Note 6: Maximum value within –1dB bandwidth.
Note 7: An external coupling capacitor is used in the RF output line.
Note 8: At 20MHz offset from the LO signal frequency.
Note 9: At 20MHz offset from the CW signal frequency.
Note 10: At 5MHz offset from the CW signal frequency.
Note 11: RF power is within 10% of fi nal value.
Note 12: RF power is at least 30dB lower than in the ON state.
Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set
in such a way that the two resulting RF tones are –10dBm each.
Note 14: IM2 measured at LO frequency + 4.1MHz
Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency +
2.2MHz.
Note 16: Amplitude average of the characterization data set without image
or LO feedthrough nulling (unadjusted).
Note 17: The difference in conversion gain between the spurious signal at
f = 3 • LO - BB versus the conversion gain at the desired signal at f = LO +
BB for BB = 2MHz and LO = 900MHz.
Note 18: Common mode current range where the common mode (CM)
feedback loop biases the part properly. The common mode current is the
sum of the current fl owing into the BBPI (or BBPQ) pin and the current
owing into the BBMI (or BBMQ) pin.
Note 19: The input voltage corresponding to the output P1dB.
Note 20: BBPI and BBMI shorted together (or BBPQ and BBMQ shorted
together).
LT5558 an 45 475 5 525 550 E50 750 850 050 V050 H50 V250 550 E50 750 050 050 V050 H50 V250 sumv VOLTAGE (V) LD msourucv (MHZ) L0 mommy (MHz) Output 1dB Cnmpressian vs Ll] Output ”’3 vs LU Frequency Output IPZ vs LU Frequency Frequency ‘ , V V V \ V2550 E50 750 850 050 V050 H50 V250 45550 E50 750 850 050 V050 H50 V250 2550 E50 750 050 050 V050 H50 V250 LD FREQUENCY (MHZ) LD msourucv (MHZ) L0 mommy (MHz) L0 Feedthrnugh to RF Output vs 2 - L0 Leakage In RF Output vs 3 - L0 Leakage In RF Output vs L0 Frequency 2 - L0 Frequency 3 - L0 Frequency ‘~\. \ 43 ‘ 750 7m 550 E50 750 850 050 V050H50V250 VI V3 V5 V7 V9 2| 23 25 I65 V95 225 255 205 3V5 35 375 L0 FREquNCv (MHZ) 2- L0 FREQUENCV (GHz) 3- L0 FREQUENCY (9H2) 4 27,va
LT5558
4
5558fa
TYPICAL PERFORMANCE CHARACTERISTICS
Supply Current vs Supply Voltage
RF Output Power vs LO Frequency
at 1VP-P Differential
Baseband Drive
Voltage Gain vs LO Frequency
Output IP3 vs LO Frequency Output IP2 vs LO Frequency
Output 1dB Compression vs LO
Frequency
LO Feedthrough to RF Output vs
LO Frequency
2 • LO Leakage to RF Output vs
2 • LO Frequency
3 • LO Leakage to RF Output vs
3 • LO Frequency
SUPPLY VOLTAGE (V)
4.5
90
SUPPLY CURRENT (mA)
110
100
120
130
85°C
25°C
–40°C
54.75
5558 G01
5.25
LO FREQUENCY (MHz)
550
RF OUTPUT POWER (dBm)
–4
–2
0
1150 1250
5558 G02
–6
–8
650 750 850 1050950
–10
–12
2
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO FREQUENCY (MHz)
550
VOLTAGE GAIN (dB)
–8
–6
–4
1150 1250
5558 G03
–10
–12
650 750 850 1050950
–14
–16
–2
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO FREQUENCY (MHz)
550
OIP3 (dBm)
20
22
24
1150 1250
5558 G04
18
16
650 750 850 1050950
14
12
26
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
fBB, 1 = 2MHz
fBB, 2 = 2.1MHz
LO FREQUENCY (MHz)
550
OIP2 (dBm)
65
70
1150 1250
5558 G05
60
55
650 750 850 1050950
50
45
75 fIM2 = fBB, 1 + fBB, 2 + fLO
fBB, 1 = 2MHz
fBB, 2 = 2.1MHz
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO FREQUENCY (MHz)
550
OP1dB (dBm)
6
8
1150 1250
5558 G06
4
2
650 750 850 1050950
0
–2
10
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO FREQUENCY (MHz)
550
LO FEEDTHROUGH (dBm)
–42
1150 1250
5558 G07
–44
650 750 850 1050950
–46
–48
–40
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
2 • LO FREQUENCY (GHz)
1.1
2 • LO LEAKAGE (dBm)
–40
2.3 2.5
5558 G08
–45
–50
1.3 1.5 1.7 2.11.9
–55
–60
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
3 • LO FREQUENCY (GHz)
1.65
3 • LO LEAKAGE (dBm)
–50
–45
3.5 3.75
5558 G09
–55
–60
1.95 2.25 2.55 3.152.85
–65
–70
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = –10dBm (–10dBm/tone for
2-tone measurements), unless otherwise noted. (Note 3)
LT5558 4 52 \ z \/ _..J..J..—l :- 4o 550 55c 750 550 e5o i050115o r25o RFFREOUENCWMHI) Absolute Ill] Gain Imbalance vs 75 5 550 E50 750 850 E50 ‘05011501250 LD EREOuENCv (MHZ) Absolute Ill] Phase Imbalance vs Ll] Frequency Ll] Frequency 02 i i i 4 5 km“) \ — 5v, 25°C \ — — 5v, 85°C \ - 4 5V‘ 25°C a — 5 5V‘ 25°C 5 5V 25“C ABSOLUTE I/u GAIN IMBALANDE (as) o ABSOLUTE m PHASE IMBALANCE (DEG) 3 . u -_ 55C 550 755 555 950 iofion5u l250 L0 EREOUENCV (MHZ) (lulpul |P3 vs Ll] Power 550 E50 750 850 E50 ‘05011501250 LD EREOuENCv (MHZ) Ll] Feedthrough vs Ll] Power 550 E50 750 850 950 IDSUH50 ‘250 EREOuEch (MHZ) Vallage Gain vs L0 Power - - - 5v,40°0 — 5v, 25°C - — 5v, 85°C 4 5V‘ 25°C - — 5 5v‘ 25°C 45 42 75 4 o a 8 LD iNPUT POWER (dam) Image Rejection vs Lu Power 24 40 735 22 ‘ A 42 2O .' é _ . ' é . ~ ’. E ’ E , g - ' X . E l8 , 5v 40°C ‘é V . ’ E ; —5v,25°o E 4 "5 . . , FEE IS —5v,es°c E 5 ‘ / ’l - E - - -5v,40°o a - - -5v 40°C ‘4 — — 5 5v 25°C 9 — 5v, 25°C 2 4O — 5v, 25°C ' - — 5V, BEWC - — 5V, 85W} 12 / raw = 2mm 4 av 25°C 4 av 25°C I “puma I _ —55V‘25°C _ —55v‘25°c I0 *50 *55 720 45 42 4 4 n a s 720 45 42 43 4 O A s 720 45 42 4 4 n a 5 LD iNPUT POWER (dam) L7 LJUW L0 INPUT POWER (me] LD iNPUT POWER (dam) 5553
LT5558
5
5558fa
TYPICAL PERFORMANCE CHARACTERISTICS
Noise Floor vs RF Frequency Image Rejection vs LO Frequency
LO and RF Port Return Loss
vs RF Frequency
Absolute I/Q Gain Imbalance vs
LO Frequency
Absolute I/Q Phase Imbalance vs
LO Frequency Voltage Gain vs LO Power
Output IP3 vs LO Power LO Feedthrough vs LO Power Image Rejection vs LO Power
LO FREQUENCY (MHz)
550
IMAGE REJECTION (dBc)
–35
–30
1150 1250
5558 G10
–40
–45
650 750 850 1050950
–50
–55
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO FREQUENCY (MHz)
550
ABSOLUTE I/Q GAIN IMBALANCE (dB)
0.2
1150 1250
5558 G11
0.1
650 750 850 1050950
0
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO FREQUENCY (MHz)
550
ABSOLUTE I/Q PHASE IMBALANCE (DEG)
4
1150 1250
5558 G12
2
3
1
650 750 850 1050950
0
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO INPUT POWER (dBm)
–20
VOLTAGE GAIN (dB)
–2
48
5558 G13
–6
–8
–10
–12
–14
–4
–16
–18
–16 –12 –8 0–4
–20
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO INPUT POWER (dBm)
–20
OIP3 (dBm)
24
48
5558 G14
20
18
16
14
12
22
10 –16 –12 –8 0–4
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
fBB, 1 = 2MHz
fBB, 2 = 2.1MHz
LO INPUT POWER (dBm)
–20
LO FEEDTHROUGH (dBm)
–40
–42
48
5558 G15
–46
–48
–50
–44
–16 –12 –8 0–4
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO INPUT POWER (dBm)
–20
IMAGE REJECTION (dBc)
–35
48
5558 G16
–40
–45
–50
–55 –16 –12 –8 0–4
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
RF FREQUENCY (MHz)
550
NOISE FLOOR (dBm/Hz)
–158
–157
1150 1250
5558 G24
–159
–160
650 750 850 1050950
–161
–162
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
fLO = 900MHz (FIXED)
NO BASEBAND SIGNAL
FREQUENCY (MHz)
550
S11 (dB)
0
1150 1250
5558 G25
–10
–20
650 750 850 1050950
–30
–40
LO PORT, EN = HIGH,
PLO = –10dBm
LO PORT, EN = LOW
LO PORT, EN = HIGH, PLO = 0dBm
RF PORT, EN = LOW
RF PORT, EN = HIGH,
PLO = 0dBm
RF PORT, EN = HIGH, NO LO
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = –10dBm (–10dBm/tone for
2-tone measurements), unless otherwise noted. (Note 3)
LT5558 *50 n V 2 a A 5 n V 2 3 a 5 O V 2 3 a 5 L AND O BASEBAMD WLTAGE thrp m) 555!va L AND O EASEBAND VOLTAGE (VP p mm 5m. LAND 0 BASEBAND VOLTAGE (VP p mm HD2:MAX PowmmmLz-LBBORLWz-vag MAX powgammL2..anmm,2.,fl 5m HUS: MAX POWER ATM: +3"ee DR‘LO’aqfis Ax POWER mm #3455 ommia-vgg RF Twn-Tnne iner (Each Tune), Image Reje inn vs CW Basehand |M2 and |M3 vs Basehand Vallage Vallage and Temperature 40 V0 V0 ‘ n n . . . . RF g 45 . ‘ ‘ . -45V 25% 7m /’T/ ’ j/ E A 55V 25% 720 E = I "\ :eew a em = E ’50 E‘ 5 V *50 < e="" 755="" 750="" i,="" j="" *70="" ’4="" ’="" —="" fen="" an="" 40="" .="" .="" h="" 0="" i="" 2="" 3="" 4="" 5="" m="" l="" ‘0="" m="" l="" ‘0="" land="" a="" baseband="" voltage="" (vp="" p.="" mm="" l="" and="" o="" easeband="" voltage="" (vp="" f="" w="" mm="" mm)="" \m2:poweratvm+4="" imhz="" ””1="" \ms="" :="" max="" power="" at="" m;="" h="" mm="" on="" cm="" v="" 2="" 2mm="" \="" and="" o="" easebamd="" voltage="" (vp="" p="" m="" mu="" mu="" 555m="">
LT5558
6
5558fa
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
0
IMAGE REJECTIOIN (dBc)
–40
45
5558 G20
–50
–55
–60
–45
123
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
TYPICAL PERFORMANCE CHARACTERISTICS
RF CW Output Power, HD2 and
HD3 vs CW Baseband Voltage and
Temperature
RF CW Output Power, HD2 and
HD3 vs CW Baseband Voltage and
Supply Voltage
LO Feedthrough to RF Output vs
CW Baseband Voltage
Image Rejection vs CW Baseband
Voltage
RF Two-Tone Power (Each Tone),
IM2 and IM3 vs Baseband Voltage
and Temperature
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
0
HD2, HD3 (dBc)
RF CW OUTPUT POWER (dBm)
–10
–20
45
5558 G17
–50
–60
–40
–70
–80
–30
10
0
–30
–40
–20
–50
–60
–10
123
–40°C
25°C
85°C
HD2 = MAX POWER AT fLO + 2 • fBB OR fLO – 2 • fBB
HD3 = MAX POWER AT fLO + 3 • fBB OR fLO – 3 • fBB
HD3
RF
HD2
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
0
HD2, HD3 (dBc)
RF CW OUTPUT POWER (dBm)
–10
–20
45
5558 G18
–50
–60
–40
–70
–80
–30
10
0
–30
–40
–20
–50
–60
–10
123
4.5V
5V
5.5V
HD2 = MAX POWER AT fLO + 2 • fBB OR fLO – 2 • fBB
HD3 = MAX POWER AT fLO + 3 • fBB OR fLO – 3 • fBB
HD3
RF
HD2
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
0
LO FEEDTHROUGH (dBm)
–30
45
5558 G19
–40
–45
–50
–35
123
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
I AND Q BASEBAND VOLTAGE (VP-P, DIFF, EACH TONE)
0.1
–80
PTONE (dBm) IM2, IM3, (dBc)
–30
–40
–50
–60
–70
0
–10
–20
10
110
5558 G21
IM3
RF
IM2
IM2 = POWER AT fLO + 4.1MHz
IM3 = MAX POWER AT fLO + 1.9MHz OR fLO + 2.2MHz
fBBI = 2MHz, 2.1MHz, 0°
fBBQ = 2MHz, 2.1MHz, 90°
–40°C
25°C
85°C
I AND Q BASEBAND VOLTAGE (VP-P, DIFF, EACH TONE)
0.1
–80
PTONE (dBm) IM2, IM3, (dBc)
–30
–40
–50
–60
–70
0
–10
–20
10
110
5558 G22
IM3
RF
IM2
fBBI = 2MHz, 2.1MHz, 0°
fBBQ = 2MHz, 2.1MHz, 90°
4.5V
5V
5.5V
IM2 = POWER AT fLO + 4.1MHz
IM3 = MAX POWER AT fLO + 1.9MHz OR fLO + 2.2MHz
RF Two-Tone Power (Each Tone),
IM2 and IM3 vs Baseband Voltage
and Supply Voltage
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = –10dBm (–10dBm/tone for
2-tone measurements), unless otherwise noted. (Note 3)
LT5558 an u u waive v95 : 400,"va I I l25‘70 . . I857!) 30 ’ E 23‘ 7 g 2n E ID a __ 1 .i]. n 11. a 775 77 755 e 2.35 75 45 4 73 5 457 «so 43 746 44 42 ,m 739 7:5 GAIN (GB) BOWEN/H1) L0 LEAKAGE mam) L0 Feedthmugh and Image Reiectinn vs Temperature After Ealihralinn at 25'!) 3 . i ’4 ~\ / \ f ‘\ i EN (Pin 1): Enable Input. When the higherthan W, the IC is turned on. W age is less than 0.5V or if the pin is is turned off. The voitage on the Ena exceed Vcc by more than 0.5V, in or damage to the chip. GND(Pins 2,4,6,9,10,12,15,17 15 and the Exposed Pad,Pin17,ar L7 LJUW
LT5558
7
5558fa
PIN FUNCTIONS
EN (Pin 1): Enable Input. When the Enable pin voltage is
higher than 1V, the IC is turned on. When the Enable volt-
age is less than 0.5V or if the pin is disconnected, the IC
is turned off. The voltage on the Enable pin should never
exceed VCC by more than 0.5V, in order to avoid possible
damage to the chip.
GND (Pins 2, 4, 6, 9, 10, 12, 15, 17): Ground. Pins 6, 9,
15 and the Exposed Pad, Pin 17, are connected to each
other internally. Pins 2 and 4 are connected to each other
internally and function as the ground return for the LO
signal. Pins 10 and 12 are connected to each other inter-
nally and function as the ground return for the on-chip RF
balun. For best RF performance, Pins 2, 4, 6, 9, 10, 12,
15 and the Exposed Pad, Pin 17, should be connected to
the printed circuit board ground plane.
TYPICAL PERFORMANCE CHARACTERISTICS
LO Leakage Distribution
LO Feedthrough and Image
Rejection vs Temperature After
Calibration at 25°C
Gain Distribution Noise Floor Distribution
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = –10dBm (–10dBm/tone for
2-tone measurements), unless otherwise noted. (Note 3)
GAIN (dB)
8
PERCENTAGE (%)
20
25
30
–4 –3.5
5558 G26
15
10
0–7 –6 –5 –4.5
–7.5 –6.5 –5.5
5
–40°C
25°C
85°C
VBB = 400mVP-P
NOISE FLOOR (dBm/Hz)
–158
0
PERCENTAGE (%)
5
10
15
20
–157.5 –157
5558 G27
–40°C
25°C
85°C
LO LEAKAGE (dBm)
–50
PERCENTAGE (%)
20
30
5558 G28
10
0–46 –42 –40
40
–38
–48 –44 –36
–40°C
25°C
85°C
VBB = 400mVP-P
Image Rejection Distribution
IMAGE REJECTION (dBc)
<–66
0
PERCENTAGE (%)
5
5
10
15
20
–58 –54–62 –50 –42–46
5558 G29
–40°C
25°C
85°C
VBB = 400mVP-P
TEMPERATURE (°C)
–40
–90
LO FEEDTHROUGH (dBm), IR (dBc)
–80
–70
–60
–50
–40
–20 02040
5558 G30
60 80
LO FEEDTHROUGH
CALIBRATED WITH PRF = –10dBm
fBBI = 2MHz, 0°
fBBQ = 2MHz, 90° + ϕCAL
IMAGE REJECTION
LT5558 flPPLICflTIOflS IflFOflmflTlon
LT5558
8
5558fa
APPLICATIONS INFORMATION
BLOCK DIAGRAM
BALUN
LT5558
0°
90°
V-I
V-I
2
5
7
4 6 9
813
310 12 15 17
1
16
14
BBMQ
BBPQ
BBMI
BBPI
11
EN
RF
VCC
GND GND
LO 5558 BD
The LT5558 consists of I and Q input differential voltage-
to-current converters, I and Q up-conversion mixers, an
RF output signal combiner/balun, an LO quadrature phase
generator and LO buffers.
External I and Q baseband signals are applied to the dif-
ferential baseband input pins, BBPI, BBMI, and BBPQ,
BBMQ. These voltage signals are converted to currents and
translated to RF frequency by means of double-balanced
up-converting mixers. The mixer outputs are combined
in an RF output balun, which also transforms the output
impedance to 50Ω. The center frequency of the resulting
RF signal is equal to the LO signal frequency. The LO in-
put drives a phase shifter which splits the LO signal into
in-phase and quadrature LO signals. These LO signals
are then applied to on-chip buffers which drive the up-
conversion mixers. Both the LO input and RF output are
single-ended, 50Ω-matched and AC coupled.
Baseband Interface
The baseband inputs (BBPI, BBMI), (BBPQ, BBMQ) pres-
ent a differential input impedance of about 3kΩ. At each
of the four baseband inputs, a low-pass fi lter using 200Ω
and 1.8pF to ground is incorporated (see Figure 1), which
limits the baseband –1dB bandwidth to approximately
250MHz. The common-mode voltage is about 2.1V and
is slightly temperature dependent. At TA = -40°C, the
common-mode voltage is about 2.28V and at TA = 85°C
it is about 2.01V.
LO (Pin 3): LO Input. The LO input is an AC-coupled single-
ended input with approximately 50Ω input impedance at
RF frequencies. Externally applied DC voltage should be
within the range –0.5V to (VCC + 0.5V) in order to avoid
turning on ESD protection diodes.
BBPQ, BBMQ (Pins 7, 5): Baseband Inputs for the
Q-channel. The differential input impedance is 3kΩ. These
pins are internally biased at about 2.1V. Applied common
mode voltage must stay below 2.5V.
VCC (Pins 8, 13): Power Supply. Pins 8 and 13 are con-
nected to each other internally. It is recommended to use
0.1μF capacitors for decoupling to ground on each of
these pins.
RF (Pin 11): RF Output. The RF output is an AC-coupled
single-ended output with approximately 50Ω output im-
pedance at RF frequencies. Externally applied DC voltage
should be within the range –0.5V to (VCC + 0.5V) in order
to avoid turning on ESD protection diodes.
BBPI, BBMI (Pins 14, 16): Baseband Inputs for the
I-channel. The differential input impedance is 3kΩ. These
pins are internally biased at about 2.1V. Applied common
mode voltage must stay below 2.5V.
PIN FUNCTIONS
LT5558 _i - ”HF 5012 ‘ usvCL L7 LJUW
LT5558
9
5558fa
APPLICATIONS INFORMATION
BALUN
GND
1.3k
1.8P
1.8P
1.3k
RF
VCC = 5V
BBPI
BBMI
LOMI
VREF = 0.5V
LOPI
C
CM
200
200
FROM Q
LT5558
5558 F01
5558 F02
2.1VDC
1.05VCC
GENERATOR
50
50
+
2.1VDC
2.1VDC
GENERATOR
50
+
2.1VDC
LT5558
1.5k
+
5558 F03
2.1VDC
2.1VDC
2.1VDC
2.1VDC
VCC RF
LT5558
EN
BBPI BBPQ
BBMI BBMQ
GND LO
BB
SOURCE
BB
SOURCE
2, 4, 6, 9, 10,
12, 15, 17
14
8, 13 11 1
16
7
5
C1
C2
RF OUT
4.5V TO 5.25V
3
C5
C3
C4
VCC
If the I/Q signals are DC-coupled to the LT5558, it is
important that the applied common-mode voltage level
of the I and Q inputs is about 2.1V in order to properly
bias the LT5558. Some I/Q generators allow setting the
common-mode voltage independently. In this case, the
common-mode voltage of those generators must be set to
1.05V to match the LT5558 internal bias where the internal
DC voltage of the signal generators is set to 2.1V due to
the source-load voltage division (See Figure 2).
The LT5558 baseband inputs should be driven differen-
tially, otherwise, the even-order distortion products will
degrade the overall linearity severely. Typically, a DAC
will be the signal source for the LT5558. A pulse-shaping
lter should be placed between the DAC outputs and the
LT5558’s baseband inputs.
An AC-coupled baseband interface with the LT5558 is
drawn in Figure 3. Capacitors C1 to C4 will introduce a
low-frequency high-pass corner together with the LT5558’s
differential input impedance of 3kΩ. Usually, capacitors
C1 to C4 will be chosen equal and in such a way that the
–3dB corner frequency f–3dB = 1/(π • RIN,DIFF • C1) is much
lower than the lowest baseband frequency.
DC coupling between the DAC outputs and the LT5558
baseband inputs is recommended, because AC coupling
will introduce a low-frequency time constant that may affect
the signal integrity. Active level shifters may be required to
adapt the common mode level of the DAC outputs to the
common mode input voltage of the LT5558. Such circuits
may, however, suffer degraded LO leakage performance
as small DC offsets and variations over temperature
accumulate. A better scheme is shown in Figure 16, where
feedback is used to track out these variations.
LO Section
The internal LO input amplifi er performs single-ended to
differential conversion of the LO input signal. Figure 4
shows the equivalent circuit schematic of the LO input.
The internal, differential LO signal is split into in-phase
and quadrature (90° phase shifted) signals that drive
LO buffer sections. These buffers drive the double bal-
anced I and Q mixers. The phase relationship between
Figure 1. Simplifed Circuit Schematic of the LT5558
(Only I-Half is Drawn)
Figure 2. DC Voltage Levels for a Generator Programmed at
1.05VDC for a 50Ω Load and the LT5558 as a Load
Figure 3. AC-Coupled Baseband Interface
LO
INPUT
20pF
50
5558 F04
VCC
Figure 4. Equivalent Circuit Schematic of the LO Input
LT5558 L7LJLJEQB
LT5558
10
5558fa
APPLICATIONS INFORMATION
Table 2. LO Port Input Impedance vs Frequency for EN = Low
and PLO = 0dBm
FREQUENCY
(MHz) INPUT IMPEDANCE (Ω)
S11
MAG ANGLE
500 37.3 + j43.4 0.464 79.7
600 72.1 + j74.8 0.545 42.1
700 184.7 + j77.8 0.630 11.7
800 203.6 – j120.8 0.696 –12.7
900 75.9 – j131.5 0.737 –32.6
1000 36.7 – j99.0 0.760 –48.8
1100 23.4 – j77.4 0.768 –62.4
1200 17.8 – j62.8 0.764 –74.3
RF Section
After up-conversion, the RF outputs of the I and Q mixers are
combined. An on-chip balun performs internal differential
to single-ended output conversion, while transforming the
output signal impedance to 50Ω. Table 3 shows the RF
port output impedance vs frequency.
Table 3. RF Port Output Impedance vs Frequency for EN = High
and PLO = 0dBm
FREQUENCY
(MHz) OUTPUT IMPEDANCE (Ω)
S22
MAG ANGLE
500 22.8 + j4.9 0.380 165.8
600 30.2 + j11.4 0.283 141.9
700 42.7 + j12.9 0.159 111.8
800 53.7 + j3.0 0.045 37.2
900 52.0 – j10.1 0.101 –73.2
1000 44.8 – j15.2 0.168 –99.7
1100 39.1 – j15.1 0.206 –116.1
1200 35.7 – j13.1 0.224 –128.9
the LO input and the internal in-phase LO and quadra-
ture LO signals is fi xed, and is independent of start-up
conditions. The phase shifters are designed to deliver
accurate quadrature signals for an LO frequency near
900MHz. For frequencies signifi cantly below 750MHz
or above 1.1GHz, the quadrature accuracy will diminish,
causing the image rejection to degrade. The LO pin input
impedance is about 50Ω and the recommended LO input
power window is –2dBm to + 2dBm. For PLO < –2dBm, the
gain, OIP2, OIP3, dynamic-range (in dBc/Hz) and image
rejection will degrade, especially at TA = 85°C.
Harmonics present on the LO signal can degrade the image
rejection, because they introduce a small excess phase shift
in the internal phase splitter. For the second (at 1.8GHz)
and third harmonics (at 2.7GHz) at –20dBc level, the in-
troduced signal at the image frequency is about –61dBc
or lower, corresponding to an excess phase shift much
less than 1 degree. For the second and third harmonics at
–10dBc, still the introduced signal at the image frequency
is about –51dBc. Higher harmonics than the third will have
less impact. The LO return loss typically will be better than
10dB over the 750MHz to 1GHz range. Table 1 shows the
LO port input impedance vs. frequency. The return loss
S11 on the LO port can be improved at lower frequencies
by adding a shunt capacitor.
Table 1. LO Port Input Impedance vs Frequency for EN = High
and PLO = 0dBm
FREQUENCY
(MHz) INPUT IMPEDANCE (Ω)
S11
MAG ANGLE
500 50.5 + j10.3 0.101 81.3
600 63.8 + j4.6 0.127 16.0
700 70.7 – j6.9 0.180 –15.2
800 70.7 – j20.3 0.237 –34.9
900 63.9 – j30.6 0.285 –50.5
1000 56.7 – j32.2 0.295 –61.4
1100 52.1 – j31.3 0.295 –69.1
1200 46.3 – j32.0 0.318 –78.0
The input impedance of the LO port is different if the part
is in shutdown mode. The LO input impedance for EN =
Low is given in Table 2.
LT5558 L7 LJUW
LT5558
11
5558fa
RF
OUTPUT
21pF
1pF 7nH
52
5558 F05
VCC
Figure 5. Equivalent Circuit Schematic of the RF Output
Note that an ESD diode is connected internally from the
RF output to the ground. For strong output RF signal
levels (higher than 3dBm), this ESD diode can degrade
the linearity performance if an external 50Ω termination
impedance is connected directly to ground. To prevent this,
a coupling capacitor can be inserted in the RF output line.
This is strongly recommended during 1dB compression
measurements.
Enable Interface
Figure 6 shows a simplifi ed schematic of the EN pin inter-
face. The voltage necessary to turn on the LT5558 is 1V.
To disable (shut down) the chip, the enable voltage must
be below 0.5V. If the EN pin is not connected, the chip is
disabled. This EN = Low condition is guaranteed by the
75kΩ on-chip pull-down resistor.
It is important that the voltage at the EN pin does not
exceed VCC by more than 0.5V. If this should occur, the
full-chip supply current could be sourced through the EN
pin ESD protection diodes, which are not designed for this
purpose. Damage to the chip may result.
EN
75k
5558 F06
VCC
25k
APPLICATIONS INFORMATION
The RF output S22 with no LO power applied is given in
Table 4.
Table 4. RF Port Output Impedance vs Frequency for EN = High
and No LO Power Applied
FREQUENCY
(MHz)( OUTPUT IMPEDANCE (Ω)
S22
MAG ANGLE
500 23.4 + j5.0 0.367 165.5
600 31.7 + j10.7 0.257 142.0
700 44.1 + j9.5 0.118 116.1
800 50.9 – j1.7 0.019 –60.8
900 46.8 – j11.1 0.118 –99.3
1000 40.8 – j13.5 0.178 –115.5
1100 36.6 – j12.6 0.209 –128.1
1200 34.3 – j10.5 0.222 –139.0
For EN = Low the S22 is given in Table 5.
To improve S22 for lower frequencies, a series capacitor
can be added to the RF output. At higher frequencies, a
shunt inductor can improve the S22. Figure 5 shows the
equivalent circuit schematic of the RF output.
Table 5. RF Port Output Impedance vs Frequency for EN = Low
FREQUENCY
(MHz) OUTPUT IMPEDANCE (Ω)
S22
MAG ANGLE
500 21.8 + j4.8 0.398 166.5
600 28.4 + j11.8 0.311 142.9
700 40.2 + j15.4 0.200 112.9
800 54.3 + j8.3 0.090 58.1
900 56.7 – j7.2 0.092 –43.3
1000 49.2 – j15.8 0.158 –83.8
1100 41.9 – j17.0 0.203 –105.0
1200 37.3 – j15.3 0.225 –120.0 Figure 6. EN Pin Interface
Evaluation Board
Figure 7 shows the evaluation board schematic. A good
ground connection is required for the LT5558’s Exposed
Pad. If this is not done properly, the RF performance will
degrade. Additionally, the Exposed Pad provides heat sink-
ing for the part and minimizes the possibility of the chip
overheating. R1 (optional) limits the EN pin current in the
event that the EN pin is pulled high while the VCC inputs
are low. The application board PCB layouts are shown in
Figures 8 and 9.
LT5558 H u [may km rm. uc mummi- ru Cuflwll u» my \ \ \ \ \_J__A_L_A_l WW WW On ‘ ”anqu ‘ H mm“ 0.57515‘4 («BENZ—1900 O O www.hnenr.com VccEN Vcc loin RFnul “‘ U” L L"; usssamr Ila mum mm mm as \nlzduu mn-msn um um cwtw mm amp—q BEPO \_I fl—Tfi—T—V \_l\_l
LT5558
12
5558fa
APPLICATIONS INFORMATION
Application Measurements
The LT5558 is recommended for base-station applications
using various modulation formats. Figure 10 shows a
typical application.
Figure 11 shows the ACPR performance for CDMA2000
using one and three channel modulation. Figures 12 and 13
illustrate the 1- and 3-channel CDMA2000 measurement.
To calculate ACPR, a correction is made for the spectrum
analyzer noise fl oor (Application Note 99).
BBIPBBIM
J1
16 15 14 13
VCC
VCC EN
9
10
11
12
4
3
2
1
5678
5558 F07
17
BBQM
BBQP
C1
100nF J6
RF
OUT
J3
LO
IN
J4
GND
J5
C2
100nF
J2
BBMI
LT5558
BBPI VCC
BBMQ GND
GND
BBPQ VCC
GND
GND
RF
GND
GND
LO
GND
EN
GND
100
R1
BOARD NUMBER: DC1017A
Figure 7. Evaluation Circuit Schematic
Figure 8. Component Side of Evaluation Board
Figure 9. Bottom Side of Evaluation Board
If the output power is high, the ACPR will be limited by the
linearity performance of the part. If the output power is
low, the ACPR will be limited by the noise performance of
the part. In the middle, an optimum ACPR is obtained.
Because of the LT5558’s very high dynamic-range, the test
equipment can limit the accuracy of the ACPR measure-
ment. Consult Design Note 375 or the factory for advice
on ACPR measurement if needed.
The ACPR performance is sensitive to the amplitude mis-
match of the BBIP and BBIM (or BBQP and BBQM) inputs.
This is because a difference in AC current amplitude will
give rise to a difference in amplitude between the even-order
harmonic products generated in the internal V-I converter.
As a result, they will not cancel out entirely. Therefore, it
is important to keep the amplitudes at the BBIP and BBIM
(or BBQP and BBQM) inputs as equal as possible.
LO feedthrough and image rejection performance may
be improved by means of a calibration procedure. LO
feedthrough is minimized by adjusting the differential DC
offset at the I and the Q baseband inputs. Image rejec-
tion can be improved by adjusting the gain and the phase
difference between the I and the Q baseband inputs. The
LO feedthrough and Image Rejection can also change
as a function of the baseband drive level, as depicted in
Figure 14.
LT5558 —I I )% > I. a 3% )% >_(X)__ T are" wowsg ‘ *Iflfl 394 895 333 900 902 904 90 RF mgouswcv 1mm) 73" DOWNUNKTEST fan MODEL 54 DPCH E *50 3, *SU E *70 E E? ’80 a fan UNCORRECTED CORRECTED E SPECTRLlM SPECTRLlM g rlflfl D ‘ “ inn f= "2" 7 SPECTRUM ANALVSER Nmsg FLOOR 7 430 w w w w 895 25 897 75 399 25 900 75 902 25 EDS 75 RF FREQUENCY (MHZ) L7 LJUW
LT5558
13
5558fa
APPLICATIONS INFORMATION
RF FREQUENCY (MHz)
896.25
POWER IN 30kHz BW (dBm)
–70
–50
–30
902.25
5558 F12
–90
–110
–80
–60
–40
–100
–120
–130
897.75 899.25 900.75 903.75
SPECTRUM ANALYSER NOISE FLOOR
CORRECTED
SPECTRUM
UNCORRECTED
SPECTRUM
DOWNLINK TEST
MODEL 64 DPCH
RF FREQUENCY (MHz)
894
POWER IN 30kHz BW (dBm)
–70
–50
–30
902
5558 F13
–90
–110
–80
–60
–40
–100
–120
–130
896 898 900 904 906
SPECTRUM ANALYSER NOISE FLOOR
CORRECTED SPECTRUM
UNCORRECTED
SPECTRUM
DOWNLINK
TEST
MODEL
64 DPCH
90°
0°
LT5558
BASEBAND
GENERATOR
PA
VCO/SYNTHESIZER
RF = 600MHz
TO 1100MHz
EN
2, 4, 6, 9, 10, 12, 15, 17
100nF
×2
5V
V-I
V-I
I-CHANNEL
Q-CHANNEL BALUN
14
16
1
7
5
8, 13
VCC
11
3
5558 F10
I-DAC
Q-DAC
Figure 10. 600MHz to 1.1GHz Direct Conversion Transmitter Application
Example: RFID Application
In Figure 15 the interface between the LTC1565 (U2, U3)
and the LT5558 is designed for RFID applications. The
LTC1565 is a seventh-order, 650kHz, continuous-time,
linear-phase, lowpass fi lter. The optimum output com-
mon-mode level of the LTC1565 is about 2.5V and the
optimum input common-mode level of the LT5558 is
around 2.1V and is temperature dependent. To adapt the
common-mode level of the LTC1565 to the LT5558, a level
shift network consisting of R1 to R6 and R11 to R16 is
used. The output common-mode level of the LTC1565 can
be adjusted by overriding the internally generated voltage
on pin 3 of the LTC1565.
RF OUTPUT POWER PER CARRIER (dBm)
–30
–90
ACPR, ALTCPR (dBc)
NOISE FLOOR AT 30MHz OFFSET (dBm/Hz)
–80
–70
–60
–50
–40
–160
–150
–140
–130
–120
–110
–25 –20 –15 –10
5558 TA01b
–5 0
3-CH ACPR
1-CH ACPR
3-CH NOISE
3-CH ALTCPR
1-CH ALTCPR
1-CH NOISE
DOWNLINK TEST
MODEL 64 DPCH
Figure 11. ACPR, ALTCPR and Noise for CDMA2000 Modulation
Figure 12. 1-Channel CDMA2000 Spectrum
Figure 13. 3-Channel CDMA2000 Spectrum
LT5558 o i 2 a a 5 IAND o BASEEAND VOLTAGE we,> W) The common-mode voitage on the LT5558 using resistors R7, R8, R17 and R18 and about 2.5V using resistor R9. Op amp U4 c for the gain loss in the resistor networks an Iow»0hmic drive to steer the common-mod of U2 and U3. Resistors R20 and R21 imp Vcc m R5 R5 R9 CI C2 “in“; W m I 4555! _ 2W 55! W L .w .our 5 w ”E N sum: 2 7 a: — 7W rDUT Emk 2 5qu LTCiSES-Ji 2 avm 3 a 7 m = c: E END v. —1 R2 3W W F A 5 was: ‘5 4593! I‘ V7 SHDN — M N 2WD: Figure 15. Basehand Interiace
LT5558
14
5558fa
APPLICATIONS INFORMATION
Figure 15. Baseband Interface Schematic of the LTC1565 with the LT5558 for RFID applications.
BBPQBBPI
VCC
2.5VDC
2.1VDC 2.1VDC
2.1VDC 2.1VDC
2.5VDC
2.5VDC
VCC
2.5VDC
RF EN
GND LO
BBMI
U1
LT5558
BBMQ
+IN
R5
3.57k
R20
249
R7
49.9k
R17
49.9k
R13
3.01k
R12
499
R1
499
R11
499
R2
499
R18
49.9k
R14
3.01k
C3
0.1µF
C4
0.1µF
R3
3.01k
R8
49.9k
R4
3.01k
–IN
+OUT 14
16
2, 4, 6, 9, 10
12, 15, 17
3
U2
1
2
3
4
8
7
6
5
LTC1565-31
–OUT
C1, C2
2 × 0.1µF
GND
V–
V+
SHDN
BB
SOURCE
R6
3.57k
R22
22.1k
R22
22.1k
+IN
R15
3.57k
R16
3.57k
R21
249
–IN
+OUT
7
4.5V to 5.25V
RF = 3dBm MAX
8, 13 11 1
451
2
3
5
U3 1
2
3
4
8
7
6
5
LTC1565-31
–OUT
GND
V–
V+
SHDN
BB
SOURCE
R24
3.32k
+
U4
R9
88.7k
LT1797
5558 F16
The common-mode voltage on the LT5558 is sampled
using resistors R7, R8, R17 and R18 and shifted up to
about 2.5V using resistor R9. Op amp U4 compensates
for the gain loss in the resistor networks and provides a
low-ohmic drive to steer the common-mode input pins
of U2 and U3. Resistors R20 and R21 improve op amp
U4’s stability while driving the large supply decoupling
capacitors C3 and C4. This corrected common-mode
voltage is applied to the common-mode input pins of U2
and U3 (pins 3). This results in a positive feedback loop
for the common mode voltage with a loop gain of about
-10dB. This technique ensures that the current compliance
on the baseband input pins of the LT5558 is not exceeded
under supply voltage or temperature extremes, and internal
diode voltage shifts or combinations of these. The core
current of the LT5558 is thus maintained at its designed
level for optimum performance. The recommended com-
mon-mode voltage applied to the inputs of the LTC1565
is about 2V. Resistor tolerances are recommended 1%
accuracy or better. The total current consumption is about
160mA and the noise fl oor at 20MHz offset is –147dBm/Hz
with 3.7dBm RF output power. For a 2VPP, DIFF baseband
input swing, the output power at fLO + fBB is 1.6dBm
and the third harmonic at fLO – 3fBB is –48.6dBm. For a
2.6VPP, DIFF input, the output power at fLO + fBB is 3.8dBm
and the third harmonic at fLO – 3fBB is –40.5dBm.
I AND Q BASEBAND VOLTAGE (VP-P,DIFF)
0
PRF, LOFT (dBm), IR (dBc)
–30
–10
10
4
IR
LOFT
–40°C
–40°CVCC = 5V
EN = HIGH
fLO = 900MHz,
fBBI = 2MHz, 0°
fBBQ = 2MHz, 90°
fRF = fBB + fLO
PLO = 0dBm
–40°C
25°C
85°C
85°C
5558 F14
–50
–70
–40
–20
0
–60
–80
–90 1235
25°C
PRF
Figure 14. LO Feedthrough and Image Rejection vs
Baseband Drive Voltage After Calibration at 25°C
LT5558 RECOMMENDED SOLDER PAD PTTCH AN Aflfltfllfl r‘ (AS‘IDES) fi" ‘ W ‘ 5 , T PTNT i NOTE T DRAWTNC CDNEORMS TO .IEDEC PACKAGE OUTLWE M072 2 DRAWTNC NOT TO SCALE 3 ALL DTMENSTDNS ARE IN MTLLTMETERS 4 DTMENSTONS DE EXPOSED PAD DN BOTTOM OE PACKAGE MOLD ELASH MDLD ELAsH TE PRESENT SHALL NOT EXCE 5 EXPOSED PAD SHALL BE SOLDER PLATED E SHADED AREA Ts ONLVA REFERENCE EOR PW T LOCATTON ON THE TOP AND BOTTOM OEPACKACE wavmanan mmsnen by Lmenv Temnmngy Cmpm ‘ ’ LINEAR HaweverrmresvunsmmyTsassumemavTtsuseLmaa TtC—TNCLGGY Dun manna unevcunnecuun om mTCmIsas flescnhefl
LT5558
15
5558fa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
PACKAGE DESCRIPTION
4.00 ± 0.10
(4 SIDES)
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
PIN 1
TOP MARK
(NOTE 6)
0.55 ± 0.20
1615
1
2
BOTTOM VIEW—EXPOSED PAD
2.15 ± 0.10
(4-SIDES)
0.75 ± 0.05 R = 0.115
TYP
0.30 ± 0.05
0.65 BSC
0.200 REF
0.00 – 0.05
(UF16) QFN 10-04
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
0.72 ±0.05
0.30 ±0.05
0.65 BSC
2.15 ± 0.05
(4 SIDES)
2.90 ± 0.05
4.35 ± 0.05
PACKAGE OUTLINE
PIN 1 NOTCH R = 0.20 TYP
OR 0.35 × 45° CHAMFER
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
LT5558 L7LJLJEQB
LT5558
16
5558fa
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2006
LT 0706 REV A • PRINTED IN USA
RELATED PARTS
PART NUMBER DESCRIPTION COMMENTS
Infrastructure
LT5511 High Linearity Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
LT5512 DC to 3GHz High Signal Level Downconverting
Mixer
DC to 3GHz, 17dBm IIP3, Integrated LO Buffer
LT5514 Ultralow Distortion, IF Amplifi er/ADC Driver with
Digitally Controlled Gain
850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range
LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature
Demodulator
20dBm IIP3, Integrated LO Quadrature Generator
LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature
Demodulator
21.5dBm IIP3, Integrated LO Quadrature Generator
LT5517 40MHz to 900MHz Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator
LT5518 1.5GHz to 2.4GHz High Linearity Direct
Quadrature Modulator
22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor, 50Ω Single-Ended LO and RF
Ports, 4-Ch W-CDMA ACPR = –64dBc at 2.14GHz
LT5519 0.7GHz to 1.4GHz High Linearity Upconverting
Mixer
17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
LT5520 1.3GHz to 2.3GHz High Linearity Upconverting
Mixer
15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
LT5521 10MHz to 3700MHz High Linearity Upconverting
Mixer
24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO
Port Operation
LT5522 600MHz to 2.7GHz High Signal Level
Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF
and LO Ports
LT5524 Low Power, Low Distortion ADC Driver with
Digitally Programmable Gain
450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control
LT5526 High Linearity, Low Power Downconverting Mixer 3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, ICC = 28mA,
–65dBm LO-RF Leakage
LT5527 400MHz to 3.7GHz High Signal Level
Downconverting Mixer
IIP3 = 23.5dBm and NF = 12.5dB at 1900MHz, 4.5V to 5.25V Supply, ICC = 78mA
LT5528 1.5GHz to 2.4GHz High Linearity Direct
Quadrature Modulator
21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband Interface,
4-Ch W-CDMA ACPR = –66dBc at 2.14GHz
LT5568 700MHz to 1050MHz High Linearity Direct
Quadrature Modulator
22.9dBm OIP3 at 850MHz, –160.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband
Interface, 3-Ch CDMA2000 ACPR = –71.4dBc at 850MHz
LT5572 1.5GHz to 2.5GHz High Linearity Direct
Quadrature Modulator
21.6dBm OIP3 at 2GHz, –158.6dBm/Hz Noise Floor, High-Ohmic 0.5VDC Baseband
Interface, 4-Ch W-CDMA ACPR = –67.7dBc at 2.14GHz
RF Power Detectors
LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply
LTC
®
5505 RF Power Detectors with >40dB Dynamic Range 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply
LTC5507 100kHz to 1000MHz RF Power Detector 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply
LTC5508 300MHz to 7GHz RF Power Detector 44dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Low Power Consumption, SC70 Package
LTC5530 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Shutdown, Adjustable Gain
LTC5531 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Shutdown, Adjustable Offset
LTC5532 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset
LT5534 50MHz to 3GHz Loq RF Power Detector with
60dB Dynamic Range
±1dB Output Variation over Temperature, 38ns Response Time
LTC5536 Precision 600MHz to 7GHz RF Detector with Fast
Comparater
25ns Response Time, Comparator Reference Input, Latch Enable Input, –26dBm to
+12dBm Input Range
LT5537 Wide Dynamic Range Loq RF/IF Detector Low Frequency to 800MHz, 83dB Dynamic Range, 2.7V to 5.25V Supply
High Speed ADCs
LTC2220-1 12-Bit, 185Msps ADC Single 3.3V Supply, 910mW Consumption, 67.5dB SNR, 80dB SFDR, 775MHz Full
Power BW
LTC2249 14-Bit, 80Msps ADC Single 3V Supply, 222mW Consumption, 73dB SNR, 90dB SFDR
LTC2255 14-Bit, 125Msps ADC Single 3V Supply, 395mW Consumption, 72.4dB SNR, 88dB SFDR, 640MHz Full
Power BW

Products related to this Datasheet

RF MODULATOR 600MHZ-1.1GHZ 16QFN
Available Quantity: 0
Unit Price: 8.46451
RF MODULATOR 600MHZ-1.1GHZ 16QFN
Available Quantity: 0
Unit Price: 8.4645