RPI-0128 Datasheet by Rohm Semiconductor

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RPI-0128
Photointerrupter, Ultraminiature SMD type
Applications
DSC(Digital steal camera)
DVC(Digital video camera)
Digital handy phone
Features
1) Ultraminiature SMD type.
2) Gap 1.2mm.
Absolute maximum ratings (Ta=25°C)
Electrical and optical characteristics (Ta=25°C)
Electrical and optical characteristics curves
Fig.1 Relative output current vs.
distance ( )
DISTANCE : d (mm)
RELATIVE COLLECTOR CURRENT : Ic (%)
Fig.4 Relative output current vs.
distance ( )
Fig.2 Forward current falloff
AMBIENT TEMPERATURE : Ta (°C)
FORWARD CURRENT : IF (mA)
0
5
10
15
20
25
30
35
-25 0 25 50 75 100
Fig.6 Relative output vs. ambient
temperature
RELATIVE COLLECTOR CURRENT : Ic (
%
)
AMBIENT TEMPERATURE : Ta (°C)
0
20
40
60
80
100
120
140
-25 0 25 50 75 100
I
F
=5mA
I
F
=5mA
I
F
=5mA
20mA
20mA
20mA
VCE=5V
DISTANCE : d (mm)
RELATIVE COLLECTOR CURRENT : Ic
(
%
)
Fig.3 Forward current vs. forward
voltage
FORWARD CURRENT : IF (mA)
FORWARD VOLTAGE : VF (V)
Parameter Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
25 to +85
30 to +85
30
5
80
30
4.5
30
80
Unit
mA
V
mW
V
V
mA
mW
°C
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input (LED)
Output
photo-
transistor
()
25°C
25°C
25°C
0
4
8
12
16
20
0 0.5 1.0 1.5 2.0
Ta=75°C
Ta=75°C
Ta=75°C
50°C
50°C
50°C
0°C
0°C
0°C
25°C
25°C
25°C
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
POWER DISSIPATION /
COLLECTOR POWER DISSIPTION : PD/PC (mW)
AMBIENT TEMPERATURE : Ta (°C)
20 0 40 60 8020 100
0
20
40
60
80
100
120
PD PC
Parameter
Cut-off frequency
Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
Rise time
Fall time
Symbol
VF
IR
ICEO
λ
P
λ
P
IC1
fC
VCE(sat)
tr
tf
Min.
5.0
1.2
Typ.
1.35
800
10
Max.
1.5
10
0.1
25
0.4
Unit
VI
F=5mA
IF=5mA
VR=5V
VCE=10V
VCE=5V, IF=20mA
IF=20mA, IC=0.1mA
VCC=5V, IF=20mA, RL=100Ω
μA
μA
nm
mA
IC2 1.0 5VCE=5V, IF=5mA
mA
V
μs
10 μs
1MHz
850 nm
Conditions
Maximum sensitivity wavelength
λ
P800 nm
This product is not designed to be protected against electromagnetic wave.
VCC=5V, IC=1mA, RL=100Ω
tr tf
Response time 10 μs
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
characteristics
Photo
transistor Infrared
light
emitter
diode
0
20
40
60
80
100
120
00.511.52
0
20
40
60
80
100
120
0 0.4 0.8 1.2 1.6
d
d
Delay time
Rise time (time for output current to rise from
10% to 90% of peak current)
Fall time (time for output current to fall from 90%
to 10% of peak current)
td :
tr :
tf :
Fig.11 Response time measurement circuit
tdtrtf
10%
90%
RL
VCCInput
Input
Output
Output
COLLECTOR CURRENT : IC (mA)
COLLECTOR TO EMITTER VOLTAGE: VCE (V)
Fig.10 Output characteristics
0
2
4
6
8
10
12
14
16
0246810
IF=20mA
15mA
10mA
5mA
Fig.8 Response time vs.
load resistance
LOAD RESISTANCE : RL (kΩ)
RESPONSE TIME : tr (μs)
110100
0
300
400
100
200
700
600
500
800 VCC=5V
IC=0.1mA tr
tf
2010.07 Rev.B
Fig.9 Dark current vs.
ambient temperature
AMBIENT TEMPERATURE : Ta (°C)
DARK CURRENT : ICEO (nA)
0 25 50 75 10025
0.1
1
10
100
1000
VCE=20V
VCE=10V
VCE=30V
I
F
=5mA
20mA
Fig.7 Collector current vs.
forward current
COLLECTOR CURRENT : IC (mA)
FORWARD CURRENT : IF (mA)
0
2
4
6
8
10
12
14
0 5 10 15 20
VCE=5V
Ta=25°C
Dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be ±0.2 .
2. Dimension in parenthesis are
show for reference.
25°C
Ta=75°C
50°C
0°C
25°C
C0.3 A
A'
3
4
2
1
0.05
0.45
1.8
0.2
0.9
2
0.6
1.4
0.6
2-0.1
1.2
(0.34)
1.6
2.5
(0.65)
(0.2)
(0.1)
±0.15
-0.05
+0.1
±0.15
±0.1
A-A' Cross section
Optical center
Gate
Anode Collector
Cathode Emitter
Internal connection diagram
±0.1
ROHm SEMICONDUCTOR
R1010
A
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