MOC3081-83M Datasheet

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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC3081M, MOC3082M, MOC3083M Rev. 1.5
November 2015
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
MOC3081M, MOC3082M, MOC3083M
6-Pin DIP Zero-Cross Triac Driver Optocoupler
(800 Volt Peak)
Features
Simplifies Logic Control of 240 VAC Power
Zero Voltage Crossing to Minimize Conducted and
Radiated Line Noise
800 V Peak Blocking Voltage
Superior Static dv/dt
– 1500 V/μs Typical, 600 V/μs Guaranteed
Safety and Regulatory Approvals
– UL1577, 4,170 VACRMS for 1 Minute
– DIN EN/IEC60747-5-5
Applications
Solenoid/Valve Controls
Lighting Controls
Static Power Switches
AC Motor Starters
Temperature Controls
E.M. Contactors
AC Motor Drives
Solid State Relays
Description
The MOC3081M, MOC3082M and MOC3083M devices
consist of a GaAs infrared emitting diode optically
coupled to a monolithic silicon detector performing the
function of a zero voltage crossing bilateral triac driver.
They are designed for use with a discrete power triac in
the interface of logic systems to equipment powered
from 240 VAC lines, such as solid-state relays, industrial
controls, motors, solenoids and consumer appliances,
etc.
Schematic Package Outlines
Figure 1. Schematic Figure 2. Package Outlines
MAIN TERM.
NC*
N/C
*DO NOT CONNECT
(TRIAC SUBSTRATE)
1
2
3
ANODE
CATHODE
4
5
6MAIN TERM.
ZERO
CROSSING
CIRCUIT
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC3081M, MOC3082M, MOC3083M Rev. 1.5 2
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 VRMS I–IV
< 300 VRMS I–IV
Climatic Classification 40/85/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak
VIORM Maximum Working Insulation Voltage 850 Vpeak
VIOTM Highest Allowable Over-Voltage 6000 Vpeak
External Creepage 7mm
External Clearance 7mm
External Clearance (for Option TV, 0.4" Lead Spacing) 10 mm
DTI Distance Through Insulation (Insulation Thickness) 0.5 mm
RIO Insulation Resistance at TS, VIO = 500 V > 109Ω
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC3081M, MOC3082M, MOC3083M Rev. 1.5 3
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol Parameter Value Unit
TOTAL DEVICE
TSTG Storage Temperature -40 to +150 °C
TOPR Operating Temperature -40 to +85 °C
TJJunction Temperature Range -40 to +100 °C
TSOL Lead Solder Temperature 260 for 10 seconds °C
PD
Total Device Power Dissipation at 25°C Ambient 250 mW
Derate Above 25°C 2.94 mW/°C
EMITTER
IFContinuous Forward Current 60 mA
VRReverse Voltage 6 V
PD
Total Power Dissipation at 25°C Ambient 120 mW
Derate Above 25°C 1.41 mW/°C
DETECTOR
VDRM Off-State Output Terminal Voltage 800 V
ITSM
Peak Non-Repetitive Surge Current
(Single Cycle 60 Hz Sine Wave) 1A
PD
Total Power Dissipation at 25°C Ambient 150 mW
Derate Above 25°C 1.76 mW/°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC3081M, MOC3082M, MOC3083M Rev. 1.5 4
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Transfer Characteristics
Zero Crossing Characteristics
Isolation Characteristics
Notes:
1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating
IF lies between max IFT (15 mA for MOC3081M, 10 mA for MOC3082M, 5 mA for MOC3083M) and absolute
maximum IF (60 mA).
4. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and
pins 4, 5 and 6 are common.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
VFInput Forward Voltage IF = 30 mA 1.3 1.5 V
IRReverse Leakage Current VR = 6 V 0.005 100 μA
DETECTOR
IDRM1 Peak Blocking Current, Either Direction VDRM = 800 V, IF = 0(1) 10 500 nA
dv/dt Critical Rate of Rise of Off-State Voltage IF = 0 (Figure 11)(2) 600 1500 V/μs
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
IFT
LED Trigger Current
(Rated IFT)
Main Terminal
Voltage = 3 V(3)
MOC3081M 15
mAMOC3082M 10
MOC3083M 5
VTM
Peak On-State Voltage,
Either Direction
ITM = 100 mA peak,
IF = rated IFT
All 1.8 3.0 V
IHHolding Current, Either Direction All 500 μA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VINH
Inhibit Voltage (MT1-MT2 voltage
above which device will not trigger) IF = Rated IFT 12 20 V
IDRM2
Leakage in Inhibited
State
IF = Rated IFT
,
VDRM = 600 V, off-state 2mA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VISO Isolation Voltage(4) f = 60 Hz, t = 1 Minute 4170 VACRMS
RISO Isolation Resistance VI-O = 500 VDC 1011 Ω
CISO Isolation Capacitance V = 0 V, f = 1 MHz 0.2 pF
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC3081M, MOC3082M, MOC3083M Rev. 1.5 5
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Typical Performance Curves
Figure 3. LED Forward Voltage vs. Forward Current
Figure 5. LED Current Required to Trigger vs.
LED Pulse Width
Figure 6. Leakage Current, IDRM vs. Temperature
Figure 4. Trigger Current Vs. Temperature
IF, LED FORWARD CURRENT (mA)
0.1 1 10 100
VF, FORWARD VOLTAGE (V)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
TA, AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
IFT, NORMALIZED
IDRM, LEAKAGE CURRENT (nA)
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
PWIN, LED TRIGGER PULSE WIDTH (μs)
101 100
IFT, LED TRIGGER CURRENT (NORMALIZED)
0
2
4
6
8
10
12
14
16
0.1
1
10
100
1000
10000
TA = -40°C
VTM = 3V
NORMALIZED TO TA = 25°C
TA = 25°C
NORMALIZED TO PWIN >> 100μs
TA = 25°C
TA = 85°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC3081M, MOC3082M, MOC3083M Rev. 1.5 6
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Typical Performance Curves (Continued)
Figure 7. IDRM2, Leakage in Inhibit State vs. Temperature
Figure 9. IH, Holding Current vs. Temperature Figure 10. Inhibit Voltage vs. Temperature
Figure 8. On-State Characteristics
VTM, ON-STATE VOLTAGE (VOLTS)
TA, AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
IDRM2, NORMALIZED
VINH, NORMALIZED
IH, HOLDING CURRENT (NORMALIZED)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
IF = RATED IFT
NORMALIZED TO TA = 25°C
-4 -3 -2 -1 0 1 2 3 4
ITM, ON-STATE CURRENT (mA)
TA = 25°C
-800
-600
-400
-200
0
200
400
600
800
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
NORMALIZED TO TA = 25°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC3081M, MOC3082M, MOC3083M Rev. 1.5 7
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Typical circuit for use when hot line switching is required. In this circuit the “hot” side of the line is switched and the load
connected to the cold or neutral side. The load may be connected to either the neutral or hot line.
Rin is calculated so that IF is equal to the rated IFT of the part, 15 mA for the MOC3081M, 10 mA for the MOC3082M,
and 5 mA for the MOC3083M. The 39 Ω resistor and 0.01 μF capacitor are for snubbing of the triac and may or may
not be necessary depending upon the particular triac and load use.
Suggested method of firing two, back-to-back SCR’s with a Fairchild triac driver. Diodes can be 1N4001; resistors,
R1 and R2, are optional 330 Ω.
Note: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only.
1. The mercury wetted relay provides a high
speed repeated pulse to the D.U.T.
2. 100x scope probes are used, to allow high
speeds and voltages.
3. The worst-case condition for static dv/dt is
established by triggering the D.U.T. with a
normal LED input current, then removing the
current. The variable RTEST allows the dv/dt to
be gradually increased until the D.U.T.
continues to trigger in response to the applied
voltage pulse, even after the LED current has
been removed. The dv/dt is then decreased
until the D.U.T. stops triggering. τRC is
measured at this point and recorded.
Figure 11. Static dv/dt Test Circuit
Vdc
800V
10 kΩ
CTEST
X100
SCOPE
PROBE
PULSE
INPUT MERCURY
WETTED
RELAY
RTEST
D.U.T.D.U.T.
Figure 12. Static dv/dt Test Waveform
504 V
0 VOLTS
APPLIED VOLTAGE
WAVEFORM
Vmax = 800 V
dv/dt = 0.63 Vmax = 504
tRC
tRC tRC
Figure 13. Hot-Line Switching Application Circuit
0.01
VCC
Rin 1
2
3
6
5
4240 VAC
HOT
FKPF12N80
NEUTRAL
360 Ω
* For highly inductive loads (power factor < 0.5), change this value to 360Ω.
330 Ω
MOC3081M
MOC3082M
MOC3083M 39*
LOAD
Figure 14. Inverse-Parallel SCR Driver Circuit
VCC
Rin
1
2
3
6
5
4
240 VAC
SCR
360 Ω
R1 D1
SCR
MOC3081M
MOC3082M
MOC3083M
R2 D2
LOAD
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC3081M, MOC3082M, MOC3083M Rev. 1.5 8
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Reflow Profile
Figure 15. Reflow Profile
Profile Freature Pb-Free Assembly Profile
Temperature Minimum (Tsmin) 150°C
Temperature Maximum (Tsmax) 200°C
Time (tS) from (Tsmin to Tsmax) 60 seconds to 120 seconds
Ramp-up Rate (TL to TP) 3°C/second maximum
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL) 60 seconds to 150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (tP) within 5°C of 260°C 30 seconds
Ramp-down Rate (TP to TL) 6°C/second maximum
Time 25°C to Peak Temperature 8 minutes maximum
Time (seconds)
Temperature (°C)
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
TL
ts
tL
tP
TP
Tsmax
Tsmin
120
Preheat Area
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
240 360
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC3081M, MOC3082M, MOC3083M Rev. 1.5 9
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Ordering Information(5)
Note:
5. The product orderable part number system listed in this table also applies to the MOC3082M, and MOC3083M,
product families.
Marking Information
Figure 16. Top Mark
Part Number Package Packing Method
MOC3081M DIP 6-Pin Tube (50 Units)
MOC3081SM SMT 6-Pin (Lead Bend) Tube (50 Units)
MOC3081SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)
MOC3081VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)
MOC3081SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)
MOC3081SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)
MOC3081TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)
MOC3081
1
2
6
43 5
V X YY
Q
Top Mark Definitions
1 Fairchild Logo
2 Device Number
3DIN EN/IEC60747-5-5 Option (only appears on component
ordered with this option)
4 One-Digit Year Code, e.g., ‘5’
5 Two-Digit Work Week, Ranging from ‘01’ to ‘53’
6 Assembly Package Code
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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