N-Channel 800 V 12A (Tc) 179W (Tc) Through Hole TO-220AB
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SIHP11N80E-GE3

DigiKey Part Number
SIHP11N80E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP11N80E-GE3
Description
MOSFET N-CH 800V 12A TO220AB
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 12A (Tc) 179W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
88 nC @ 10 V
Series
Vgs (Max)
±30V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
1670 pF @ 100 V
Part Status
Active
Power Dissipation (Max)
179W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
800 V
Supplier Device Package
TO-220AB
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
440mOhm @ 5.5A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (3)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
SIHP11N80E-BE3Vishay Siliconix856742-SIHP11N80E-BE3-ND$4.50000Direct
FCP600N60Zonsemi143FCP600N60ZOS-ND$3.12000Similar
STP10NM60NDSTMicroelectronics626497-12276-ND$2.75000Similar
In-Stock: 10
Check for Additional Incoming Stock
All prices are in USD
Tube
QuantityUnit PriceExt Price
1$4.81000$4.81
10$3.17700$31.77
100$2.24870$224.87
500$1.85282$926.41
1,000$1.72569$1,725.69
2,000$1.61884$3,237.68
5,000$1.58625$7,931.25
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.