MMBT2907A Datasheet

Diodes Incorporated

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Datasheet

MMBT2907A
Document number: DS30040 Rev. 19 - 2
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April 2016
© Diodes Incorporated
MMBT2907A
60V PNP SMALL SIGNAL TRANSISTOR IN SOT23
Features
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Complementary NPN Type: MMBT2222A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
Ordering Information (Notes 4 & 5)
Product
Status
Compliance
Reel Size (inches)
Tape Width (mm)
Quantity Per Reel
MMBT2907A-7-F
Active
AEC-Q101
7
8
3,000
MMBT2907A-13-F
Active
AEC-Q101
13
8
10,000
MMBT2907AQ-7-F
Active
Automotive
7
8
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2013
2014
2015
2016
2017
2018
2019
2020
Code
A
B
C
D
E
F
G
H
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8 9 O N D
C
E
B
Top View
SOT23
Device Symbol
K2F
YM
Top View
Pin-Out
K2F = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex:
D = 2016)
M or M = Month (ex: 9 = September)
SOT23
MMBT2907A
Document number: DS30040 Rev. 19 - 2
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April 2016
© Diodes Incorporated
MMBT2907A
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-6.0
V
Collector Current
IC
-600
mA
Peak Collector Current
ICM
-800
mA
Peak Base Current
IBM
-200
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Collector Power Dissipation
(Note 6)
PD
310
mW
(Note 7)
350
Thermal Resistance, Junction to Ambient
(Note 6)
RθJA
403
°C/W
(Note 7)
357
Thermal Resistance, Junction to Leads
(Note 8)
RθJL
350
°C/W
Operating and Storage Temperature Range
TJ,TSTG
-55 to +150
°C
ESD Ratings (Note 9)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 15 mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT2907A
Document number: DS30040 Rev. 19 - 2
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April 2016
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MMBT2907A
Thermal Characteristics and Derating Information
025 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (oC)
Max Power Dissipation (W)
100μ 1m 10m 100m 110 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Impedance
D=0.5
D=0.2 D=0.1 Single Pulse
D=0.05
Thermal Resistance (
o
C/W)
Pulse Width (s)
10m 100m 110 100 1k
0.1
1
10
Single Pulse. TA=25oC
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
100µ
MMBT2907A
Document number: DS30040 Rev. 19 - 2
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April 2016
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MMBT2907A
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
-60
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 10)
BVCEO
-60
V
IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
-6.0
V
IE = -100μA, IC = 0
Collector Cut-Off Current ICBO -10
nA
μA
V
CB
= -50V, I
E
= 0
VCB = -50V, IE = 0, TA = +125°C
Collector Cut-Off Current
ICEX
-50
nA
VCE = -30V, VEB(OFF) = -0.5V
Base Cut-Off Current
IBL
-50
nA
VCE = -30V, VEB(OFF) = -0.5V
Emitter Cut-Off Current
IEBO
-50
nA
VEB = -6.0V
ON CHARACTERISTICS (Note 10)
DC Current Gain hFE
75
100
100
100
50
300
I
C
= -100µA, V
CE
= -10V
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -150mA, VCE = -10V
IC = -500mA, VCE = -10V
Collector-Emitter Saturation Voltage VCE(SAT)
-0.4
-1.6 V
I
C
= -150mA, I
B
= -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage VBE(SAT)
-1.3
-2.6
V
I
C
= -150mA, I
B
= -15mA
IC = -500mA, IB = -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8.0
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
30
pF
VEB = -2.0V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product fT 200 MHz
V
CE
= -20V, I
C
= -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time
tON
45
ns
VCC = -30V, IC = -150mA,
IB1 = -15mA
Delay Time
tD
10
ns
Rise Time
tR
40
ns
Turn-Off Time
tOFF
100
ns
VCC = -6.0V, IC = -150mA,
IB1 = IB2 = -15mA
Storage Time
tS
80
ns
Fall Time
tF
30
ns
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMBT2907A
Document number: DS30040 Rev. 19 - 2
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April 2016
© Diodes Incorporated
MMBT2907A
1
10
1,000
100
-1 -10 -100
f , GAIN-BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current
C
V = -5V
CE
I , BASE CURRENT (mA)
Fig. 5 Typical Collector Saturation Region
B
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
-0.001 -0.01
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-0.1 -1 -10 -100
I = -1mA
C
I = -10mA
C
I = -30mA
C
I = -100mA
C
I = -300mA
C
CAPACITANCE (pF)
V , REVERSE VOLTAGE (V)
Fig. 6 Typical
R
Capacitance Characteristics
0
5
10
15
20
25
30
35
02 4 6810 12 14 16 18 20
Cobo
Cibo
f = 1MHz
0
-0.1
-0.2
-0.3
-0.6
-0.5
-0.4
-1
-10
-100
-1,000
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
V
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
C
E
(
S
A
T
)
I
I
C
B
= 10
T = 150°C
A
T = 25°C
A
T = -50°C
A
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-0.1
-1
-10
-100
V
,
B
A
S
E
-
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
B
E
(
O
N
)
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical Base-Emitter Saturation Voltage
vs. Collector Current
C
V = -5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
VBE(ON), BASE-EMITTER SATURATION VOLTAGE (V)
1
10
1,000
100
-1
-10
-1,000
-100
h
,
D
C
C
U
R
R
E
N
T
G
A
I
N
F
E
I , COLLECTOR CURRENT (mA)
Fig. 1 Typical DC Current Gain vs. Collector Current
C
V = -5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
hFE, DC CURRENT GAIN
MMBT2907A
Document number: DS30040 Rev. 19 - 2
6 of 7
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April 2016
© Diodes Incorporated
MMBT2907A
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
X
Y
Y1 C
X1
MMBT2907A
Document number: DS30040 Rev. 19 - 2
7 of 7
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April 2016
© Diodes Incorporated
MMBT2907A
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com

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